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Article
Peer-Review Record

Impact of Nitrogen, Boron and Phosphorus Impurities on the Electronic Structure of Diamond Probed by X-ray Spectroscopies

Reviewer 1: Anonymous
Reviewer 2: Anonymous
Received: 12 February 2021 / Revised: 26 February 2021 / Accepted: 6 March 2021 / Published: 9 March 2021
(This article belongs to the Collection Feature Papers in the Science and Engineering of Carbons)

Round 1

Reviewer 1 Report

The study is well done and carefully presented. As the authors point out the changes in the surface morphology and surface termination may confound the interpretation of the data in terms of which features in the spectra are due to changes in morphology and which are really related to doping. But the data itself with so many techniques on the same set of samples serves as a useful reference. In the future the surfaces should be polished and etched so as to obtain similar surface morphology and roughness and surface termination. Then perhaps the results of doping might appear. 

Author Response

Dear reviewer 1,

Thank you for your kind appreciation of our work. I took note of your suggestions for future studies.

Reviewer 2 Report

Diamond doping to create a wide-gap semiconductor with n-type conductivity is a serious problem faced by the researchers. For this reason, the study of the electronic structure of doped diamonds is an important work. Authors present a detailed study of the band structure of doped diamonds by different methods of X-ray spectroscopy. 

I have one small comment: Line 252. I think that authors mean Figure S4.

I think the work will be interesting to a wide range of researchers. The work should be published.

Author Response

Dear reviewer 2,

Thank very much for your positive feedback on our manuscript and for pointing out the mistake on the reference to figure S4. We have corrected it in the revised manuscript.

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