Next Article in Journal
Why Is Deep Learning Challenging for Printed Circuit Board (PCB) Component Recognition and How Can We Address It?
Previous Article in Journal
Flash-Based Security Primitives: Evolution, Challenges and Future Directions

TRNGs from Pre-Formed ReRAM Arrays

College of Engineering Informatics and Applied Sciences, Northern Arizona University, Flagstaff, AZ 86011, USA
Air Force Research Laboratory, Information Directorate, Rome, NY 13441, USA
Author to whom correspondence should be addressed.
Received: 3 January 2021 / Revised: 30 January 2021 / Accepted: 7 February 2021 / Published: 9 February 2021
(This article belongs to the Section Hardware Security)
Schemes generating cryptographic keys from arrays of pre-formed Resistive Random Access (ReRAM) cells, called memristors, can also be used for the design of fast true random number generators (TRNG’s) of exceptional quality, while consuming low levels of electric power. Natural randomness is formed in the large stochastic cell-to-cell variations in resistance values at low injected currents in the pre-formed range. The proposed TRNG scheme can be designed with three interconnected blocks: (i) a pseudo-random number generator that acts as an extended output function to generate a stream of addresses pointing randomly at the array of ReRAM cells; (ii) a method to read the resistance values of these cells with a low injected current, and to convert the values into a stream of random bits; and, if needed, (iii) a method to further enhance the randomness of this stream such as mathematical, Boolean, and cryptographic algorithms. The natural stochastic properties of the ReRAM cells in the pre-forming range, at low currents, have been analyzed and demonstrated by measuring a statistically significant number of cells. Various implementations of the TRNGs with ReRAM arrays are presented in this paper. View Full-Text
Keywords: random number generation; resistive memories; cryptographic systems; unclonable functions; low power random number generation; resistive memories; cryptographic systems; unclonable functions; low power
Show Figures

Figure 1

MDPI and ACS Style

Cambou, B.; Telesca, D.; Assiri, S.; Garrett, M.; Jain, S.; Partridge, M. TRNGs from Pre-Formed ReRAM Arrays. Cryptography 2021, 5, 8.

AMA Style

Cambou B, Telesca D, Assiri S, Garrett M, Jain S, Partridge M. TRNGs from Pre-Formed ReRAM Arrays. Cryptography. 2021; 5(1):8.

Chicago/Turabian Style

Cambou, Bertrand, Donald Telesca, Sareh Assiri, Michael Garrett, Saloni Jain, and Michael Partridge. 2021. "TRNGs from Pre-Formed ReRAM Arrays" Cryptography 5, no. 1: 8.

Find Other Styles
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

Back to TopTop