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Crystals
Special Issues
Ferroelectric and Multiferroic Thin Films
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Ferroelectric and Multiferroic Thin Films

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".

Deadline for manuscript submissions: 30 June 2024 | Viewed by 2752

Special Issue Editors

Dr. Wenqi Zhang

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Guest Editor
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 83347, Taiwan
Interests: semiconductor device; device reliability; device measurement; device fabrication
Prof. Dr. Yilin Yang

E-Mail Website
Guest Editor
Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung 82444, Taiwan
Interests: solid-state electronics; semiconductor devices; memory devices
Prof. Dr. Yidong Xia

E-Mail Website
Guest Editor
College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China
Interests: materials science and engineering; neuromorphic devices; optoelectronic semiconductors and devices
Dr. Yong Li

E-Mail Website
Guest Editor
Inner Mongolia Key Laboratory of Ferroelectric-Related New Energy Materials and Devices, School of Materials and Metallurgy, Inner Mongolia University of Science and Technology, Baotou 014010, China
Interests: ceramics; thin film; energy storage; photovoltaic; microwave absorption

Special Issue Information

Dear Colleagues,

Ferroelectric and multiferroic thin films have been an active research area in the field of materials science and engineering. These materials exhibit unique properties such as spontaneous polarization, piezoelectricity, and magnetoelectric coupling, making them promising candidates for a wide range of applications. Ferroelectric and multiferroic thin films find applications in various fields such as electronics, sensors, actuators, and memory devices. In the field of electronics, these materials are used in non-volatile memory devices, such as ferroelectric random-access memory (FeRAM). The piezoelectricity of ferroelectric thin films is utilized in microelectromechanical systems (MEMS) and sensors. Multiferroic thin films, which exhibit both ferroelectric and ferromagnetic properties, have the potential to revolutionize spintronics and magnetic memory devices. The magnetoelectric coupling in these materials allows for the control of magnetization by applying an electric field or vice versa, which is crucial for the development of low-power and high-density data storage devices.

The potential topics of this Special Issue of “Ferroelectric and multiferroic thin films” include, but are not limited to:

  1. Synthesis and growth of ferroelectric and multiferroic thin films.
  2. Characterization of structural, electrical, and magnetic properties of ferroelectric and multiferroic thin films.
  3. Applications in electronic devices, sensors, actuators, and memory devices.
  4. Theoretical and computational studies of these materials
  5. Advanced techniques for the synthesis and characterization of these materials.

Dr. Wenqi Zhang
Prof. Dr. Yilin Yang
Prof. Dr. Yidong Xia
Dr. Yong Li
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • ferroelectric film deposition
  • crystallization of ferroelectric film
  • FeRAM
  • ferroelectric transistor
  • MEMS

Published Papers (2 papers)

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Research

13 pages, 4301 KiB  
Article
A Self-Powered Broadband Photodetector with High Photocurrent Based on Ferroelectric Thin Film Using Energy Band Structure Design
by Xing Gao, Xin Song, Shan Zhang, Xinxiang Yang, Pei Han, Liwen Zhang, Chunxiao Lu, Xihong Hao and Yong Li
Crystals 2024, 14(1), 79; https://0-doi-org.brum.beds.ac.uk/10.3390/cryst14010079 - 13 Jan 2024
Viewed by 977
Abstract
Self-powered photodetectors have the advantages of high sensitivity, sustainability, and small size and have become a research hotspot in advanced optoelectronic systems. However, the low output photocurrent density seriously hinders the practical application of ferroelectric self-powered photodetectors. Herein, the high-efficiency photoelectric detection performance [...] Read more.
Self-powered photodetectors have the advantages of high sensitivity, sustainability, and small size and have become a research hotspot in advanced optoelectronic systems. However, the low output photocurrent density seriously hinders the practical application of ferroelectric self-powered photodetectors. Herein, the high-efficiency photoelectric detection performance of the Bi1-xHoxFeO3 ferroelectric self-powered photodetector is realized by doping Ho. The responsivity (R) and detectivity (D*) can reach 0.0159 A/W and 1.94 × 1011 Jones under monochromatic light with a wavelength of 900 nm. Meanwhile, the R and D* can reach 0.022 A/W and 2.65 × 1011 Jones under sunlight. These excellent photodetection performances are attributed to the high short-circuit current density (Jsc). When the Ho content is 6%, the output photocurrent reaches up to 0.81 mA/cm2. The systematic structure and photo-electric characteristic analysis suggest that the decrease in the band gap leads to the generation of a larger photocurrent while the ferroelectric polarization is reduced slightly. This work provides a new way to obtain high-performance self-powered photodetectors. Full article
(This article belongs to the Special Issue Ferroelectric and Multiferroic Thin Films)
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11 pages, 1753 KiB  
Article
Optimization of a LaNiO3 Bottom Electrode for Flexible Pb(Zr,Ti)O3 Film-Based Ferroelectric Random Access Memory Applications
by Yeong Uk Choi, Hyun Soo Ahn, Jung Ehy Hong, Dong In Yang, Hwa-Pyeong Lee, Dae-Yong Jeong, Minbaek Lee, Jong Hun Kim and Jong Hoon Jung
Crystals 2023, 13(12), 1613; https://0-doi-org.brum.beds.ac.uk/10.3390/cryst13121613 - 21 Nov 2023
Viewed by 1098
Abstract
The direct growth of ferroelectric films onto flexible substrates has garnered significant interest in the advancement of portable and wearable electronic devices. However, the search for an optimized bottom electrode that can provide a large and stable remnant polarization is still ongoing. In [...] Read more.
The direct growth of ferroelectric films onto flexible substrates has garnered significant interest in the advancement of portable and wearable electronic devices. However, the search for an optimized bottom electrode that can provide a large and stable remnant polarization is still ongoing. In this study, we report the optimization of an oxide-based LaNiO3 (LNO) electrode for high-quality Pb(Zr0.52Ti0.48)O3 (PZT) thick films. The surface morphology and electrical conductivity of sol-gel-grown LNO films on a fluorophlogopite mica (F-mica) substrate were optimized at a crystallization temperature of 800 °C and a film thickness of 120 nm. Our approach represents the promising potential pairing between PZT and LNO electrodes. While LNO-coated F-mica maintains stable electrical conductivity during 1.0%-strain and 104-bending cycles, the upper PZT films exhibit a nearly square-like polarization–electric field behavior under those stress conditions. After 104 cycles at 0.5% strain, the remnant polarization shows decreases as small as ~14%. Under flat (bent) conditions, the value decreases to just 81% (49%) after 1010 fatigue cycles and to 96% (85%) after 105 s of a retention test, respectively. Full article
(This article belongs to the Special Issue Ferroelectric and Multiferroic Thin Films)
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