Advances in High-Temperature Top-seeded Solution Growth

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".

Deadline for manuscript submissions: closed (30 September 2021) | Viewed by 5287

Special Issue Editors


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Guest Editor
Wigner Research Centre for Physics, Budapest, Hungary
Interests: single crystal growth; high-temperature top-seeded solution growth; non-faceted growth; stoichiometric LiNbO3; optical damage resistant dopants

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Guest Editor
State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
Interests: crystal growth; nonlinear optical materials; solid state chemistry; chalcogenides; 2D materials; THz time domain spectroscopy (THz-TDS)
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Special Issue Information

Dear Colleagues,

In the high-temperature top-seeded solution growth (HTTSSG) technique, a crystal seed is placed in contact with the top surface of the high-temperature solution.

The technique originates from the flux method. The top-seeding setup was first developed by Miller in 1957 for growing high quality potassium niobate, KNbO3, by slow cooling.

Many compounds melt incongruently or congruently but have an excessively high vapor pressure or melting point; others decompose below the melting point or do not crystallize first in the desired modification. In these cases, application of the Czochralski crystal growth technique is not possible, but the HTTSSG method, where crystal growth may be performed at a temperature well below the melting point of the material, can be used.

The HTTSSG technique has undergone great technical development since its first application and has been used for the growth of a wide range of crystal materials such as non-linear-optical materials, high-Tc superconductors, and dielectric materials, particularly ferroelectrics.

In this Special Issue, studies addressing or related to the following topics are welcome: 

  • growth of technologically important crystalline materials like titanates, molibdates, vanadates, tungstates, niobates, tantalates, borates, phosphates, and cuprates found in binary, ternary, and quaternary systems;
  • investigations into the crystal growth conditions, growth atmosphere, non-facetting growth, proper flux, and seeding process;
  • morphological stability, facetting, segregation, growth interfaces, characteristic defects, flux inclusions, and crystallization mechanisms;
  • theoretical investigations into temperature and convection control;
  • technical developments and the design of novel apparatus.

Dr. Zsuzsanna Szaller
Prof. Dr. Shanpeng Wang
Guest Editors

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Keywords

  • flux growth
  • solution growth
  • facetting
  • non-linear-optical materials
  • high-Tc superconductors
  • ferroelectrics
  • temperature and convection control

Published Papers (2 papers)

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Research

9 pages, 3415 KiB  
Article
Flux Growth and Properties of Volatile Bromine-Containing UV Nonlinear Optical Crystal K3B6O10Br
by Huaiyu Hu, Chen Zhou, Jiahao Jiao, Siru Guo, Yanna Chen and Min Zhang
Crystals 2022, 12(1), 33; https://0-doi-org.brum.beds.ac.uk/10.3390/cryst12010033 - 26 Dec 2021
Cited by 2 | Viewed by 2226
Abstract
A UV Nonlinear optical (NLO) crystal is one of the key devices in all-solid-state laser technology, and borate halides show outstanding potential due to their abundant structural diversity and short UV cut-off edges. In this article, the sizable UV NLO crystal of K [...] Read more.
A UV Nonlinear optical (NLO) crystal is one of the key devices in all-solid-state laser technology, and borate halides show outstanding potential due to their abundant structural diversity and short UV cut-off edges. In this article, the sizable UV NLO crystal of K3B6O10Br (KBOB) has been grown with lead-containing and lead-free fluxes systems using the high-temperature top-seeded solution growth (TSSG) method. Energy Dispersive X-ray Spectroscopy (EDS) and transmittance spectra illustrate the influence of Pb2+ ions on the transmittance properties and laser-induced damage threshold (LDT). The thermal property, namely, thermal expansion, thermal conductivity, and thermal diffusivity curves, were characterized. Moreover, a small variation of thermal refractive indexes was analyzed to illustrate the advantage of KBOB in the application for temperature-fluctuated specific regions. Full article
(This article belongs to the Special Issue Advances in High-Temperature Top-seeded Solution Growth)
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10 pages, 4101 KiB  
Article
Flux Method Growth of Large Size Group IV–V 2D GeP Single Crystals and Photoresponse Application
by Shuqi Zhao, Tongtong Yu, Ziming Wang, Shilei Wang, Limei Wei, Xiaohua Chen and Shanpeng Wang
Crystals 2021, 11(3), 235; https://0-doi-org.brum.beds.ac.uk/10.3390/cryst11030235 - 26 Feb 2021
Cited by 4 | Viewed by 2234
Abstract
Two-dimensional (2D) materials driven by their unique electronic and optoelectronic properties have opened up possibilities for their various applications. The large and high-quality single crystals are essential to fabricate high-performance 2D devices for practical applications. Herein, IV-V 2D GeP single crystals with high-quality [...] Read more.
Two-dimensional (2D) materials driven by their unique electronic and optoelectronic properties have opened up possibilities for their various applications. The large and high-quality single crystals are essential to fabricate high-performance 2D devices for practical applications. Herein, IV-V 2D GeP single crystals with high-quality and large size of 20 × 15 × 5 mm3 were successfully grown by the Bi flux growth method. The crystalline quality of GeP was confirmed by high-resolution X-ray diffraction (HRXRD), Laue diffraction, electron probe microanalysis (EPMA) and Raman spectroscopy. Additionally, intrinsic anisotropic optical properties were investigated by angle-resolved polarized Raman spectroscopy (ARPRS) and transmission spectra in detail. Furthermore, we fabricated high-performance photodetectors based on GeP, presenting a relatively large photocurrent over 3 mA. More generally, our results will significantly contribute the GeP crystal to the wide optoelectronic applications. Full article
(This article belongs to the Special Issue Advances in High-Temperature Top-seeded Solution Growth)
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