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Micromachines
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III-V/III-N Materials and Devices, 2nd Edition
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III-V/III-N Materials and Devices, 2nd Edition

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".

Deadline for manuscript submissions: closed (30 March 2024) | Viewed by 2990

Special Issue Editor

Prof. Dr. Han Eol Lee

E-Mail Website
Guest Editor
Division of Advanced Materials Engineering, Jeonbuk National University, 567 Baekje-daero, Deokjin-gu, Jeonju 54896, Republic of Korea
Interests: flexible and wearable electronics; electronic skin; micro light-emitting diodes; compound semiconductor materials (III-V, III-N); microLED-based displays and biomedical applications
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

III-V/III-N compound semiconductors have attracted much attention due to their superior electrical and photonic properties in devices. These III-V/III-N-based devices have been applied to practical applications in solid-state photonics and electronics. Furthermore, several researchers have modulated the compound semiconductor structures, enhancing the electrical, optical, and thermal properties for novel and/or improved performance in applied technologies. This Special Issue focuses on the latest research results for III-V materials/devices, III-N materials/devices, and their applications, such as in electronics, sensors, photonics, and photovoltaics.

The topics of interest include, but are not limited to:

  • Theory of III-V/III-N materials;
  • Growth of III-V/III-N materials;
  • Characterization of III-V/III-N materials;
  • III-V/III-N material-based devices (electronics, sensors, photonics, photovoltaics, etc.).

Prof. Dr. Han Eol Lee
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • III-V materials and devices
  • III-N materials and devices

Published Papers (3 papers)

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Research

12 pages, 6501 KiB  
Article
An Investigation of Body Diode Reliability in Commercial 1.2 kV SiC Power MOSFETs with Planar and Trench Structures
by Jiashu Qian, Limeng Shi, Michael Jin, Monikuntala Bhattacharya, Atsushi Shimbori, Hengyu Yu, Shiva Houshmand, Marvin H. White and Anant K. Agarwal
Micromachines 2024, 15(2), 177; https://0-doi-org.brum.beds.ac.uk/10.3390/mi15020177 - 25 Jan 2024
Cited by 1 | Viewed by 1072
Abstract
The body diode degradation in SiC power MOSFETs has been demonstrated to be caused by basal plane dislocation (BPD)-induced stacking faults (SFs) in the drift region. To enhance the reliability of the body diode, many process and structural improvements have been proposed to [...] Read more.
The body diode degradation in SiC power MOSFETs has been demonstrated to be caused by basal plane dislocation (BPD)-induced stacking faults (SFs) in the drift region. To enhance the reliability of the body diode, many process and structural improvements have been proposed to eliminate BPDs in the drift region, ensuring that commercial SiC wafers for 1.2 kV devices are of high quality. Thus, investigating the body diode reliability in commercial planar and trench SiC power MOSFETs made from SiC wafers with similar quality has attracted attention in the industry. In this work, current stress is applied on the body diodes of 1.2 kV commercial planar and trench SiC power MOSFETs under the off-state. The results show that the body diodes of planar and trench devices with a shallow P+ depth are highly reliable, while those of the trench devices with the deep P+ implantation exhibit significant degradation. In conclusion, the body diode degradation in trench devices is mainly influenced by P+ implantation-induced BPDs. Therefore, a trade-off design by controlling the implantation depth/dose and maximizing the device performance is crucial. Moreover, the deep JFET design is confirmed to further improve the body diode reliability in planar devices. Full article
(This article belongs to the Special Issue III-V/III-N Materials and Devices, 2nd Edition)
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14 pages, 4807 KiB  
Article
RF Characterization of GaAs HBT under Load Mismatch with Reverse Wave Injection Technique
by Yidong Xu, Yuxiu Tong and Jiangtao Su
Micromachines 2023, 14(11), 2058; https://0-doi-org.brum.beds.ac.uk/10.3390/mi14112058 - 03 Nov 2023
Viewed by 682
Abstract
RF PAs need to be reliable enough to protect them from damage under load mismatch conditions. This paper investigated the characteristics of GaAs heterojunction bipolar transistors (HBTs) under load mismatch conditions using a novel reverse wave injection technique to realize large VSWR ruggedness [...] Read more.
RF PAs need to be reliable enough to protect them from damage under load mismatch conditions. This paper investigated the characteristics of GaAs heterojunction bipolar transistors (HBTs) under load mismatch conditions using a novel reverse wave injection technique to realize large VSWR ruggedness measurement with the circle centered at 50 Ohm and optimal impedance separately to analyze the device in real applications. With a real-time waveform measurement system, the RF voltage and current waveform information can be acquired, which provide a more-accurate view of what is occurring at the current generator plane of the HBT device. Thereby, the potential failure mechanisms and load impedance can be identified to design the most-suitable PA circuits in communication systems. Full article
(This article belongs to the Special Issue III-V/III-N Materials and Devices, 2nd Edition)
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15 pages, 8007 KiB  
Article
Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor
by Zhiheng Wang, Yanrong Cao, Xinxiang Zhang, Chuan Chen, Linshan Wu, Maodan Ma, Hanghang Lv, Ling Lv, Xuefeng Zheng, Wenchao Tian, Xiaohua Ma and Yue Hao
Micromachines 2023, 14(10), 1948; https://0-doi-org.brum.beds.ac.uk/10.3390/mi14101948 - 19 Oct 2023
Viewed by 921
Abstract
A GaN high-electron-mobility transistor (HEMT) was simulated using the semiconductor simulation software Silvaco TCAD in this paper. By constructing a two-dimensional structure of GaN HEMT, combined with key models such as carrier mobility, the effects of a different state, different incidence position, different [...] Read more.
A GaN high-electron-mobility transistor (HEMT) was simulated using the semiconductor simulation software Silvaco TCAD in this paper. By constructing a two-dimensional structure of GaN HEMT, combined with key models such as carrier mobility, the effects of a different state, different incidence position, different drain voltage, different LET values, and a different incidence angle on the single-event transient effect of GaN HEMT are simulated. LET stands for the linear energy transfer capacity of a particle, which refers to the amount of energy transferred by the particle to the irradiated substance on the unit path. The simulation results show that for GaN HEMTs, the single-event transient effect is more obvious when the device is in off-state than in on-state. The most sensitive location of GaN HEMTs to the single-event effect is in the region near the drain. The peak transient current increases with the increase in the drain bias and incident ion LET values. The drain charge collection time increases with the angle of incidence of heavy ion. Full article
(This article belongs to the Special Issue III-V/III-N Materials and Devices, 2nd Edition)
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