Fabrication and Application of Field Effect Transistor

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "B:Biology and Biomedicine".

Deadline for manuscript submissions: closed (15 February 2022) | Viewed by 2906

Special Issue Editor


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Guest Editor
Department of Chemical Engineering, Stanford University, Stanford, CA 94305, USA
Interests: field-effect transistor; biosensors and bioelectronics; nanoelectronics; implantable and wearable sensors; flexible electronics

Special Issue Information

Dear colleagues,

Biosensors with high selectivity and sensitivity can monitor important biomarkers in body fluids, which have critical applications in biomedical research, such as diseases diagnosis, health condition monitoring, and environmental monitoring. Developing biosensors that provide accurate, real-time information of one or multiple analytes is at the heart of next-generation medical devices for personalized medicine, such as point-of-care measurements, wearable sensors, and implantable bioelectronics. Field-effect transistors (FETs) have unique properties and advantages toward applications for biosensing, including label-free detection, low detection limits, real-time sensing, and straightforward integration with standard semiconductor processing. FET biosensors are typically constructed by immobilizing environmental sensitive chemical and biological molecules on the surfaces of semiconducting channels or gate electrodes, such as pH-sensitive molecules, antibodies, enzymes, and aptamers. Upon interactions with target molecules, receptors induce electronic signals in FETs, such as changes in channel conductance, source-drain current, threshold voltages, and device capacitance. Novel fabrication approaches, including different device designs, synthesis of novel materials, and unconventional fabrication approaches, have been proposed to enable advanced applications needed for biosensors. Accordingly, this Special Issue seeks to showcase research papers, short communications, and review articles that focus on fabrication and application of FET biosensors, such as novel fabrication and design of FET biosensors, different detection mechanism based on FET biosensors, and advances in FET applications for biomedical applications. 

Dr. Chuanzhen Zhao
Guest Editor

Manuscript Submission Information

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Keywords

  • field-effect transistor
  • biosensors
  • micro- and nano-fabrication
  • point-of-care devices
  • wearable biosensors
  • implantable biosensors
  • flexible biosensors

Published Papers (1 paper)

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Research

11 pages, 3466 KiB  
Article
Line-Edge Roughness from Extreme Ultraviolet Lithography to Fin-Field-Effect-Transistor: Computational Study
by Sang-Kon Kim
Micromachines 2021, 12(12), 1493; https://0-doi-org.brum.beds.ac.uk/10.3390/mi12121493 - 30 Nov 2021
Cited by 7 | Viewed by 2395
Abstract
Although extreme ultraviolet lithography (EUVL) has potential to enable 5-nm half-pitch resolution in semiconductor manufacturing, it faces a number of persistent challenges. Line-edge roughness (LER) is one of critical issues that significantly affect critical dimension (CD) and device performance because LER does not [...] Read more.
Although extreme ultraviolet lithography (EUVL) has potential to enable 5-nm half-pitch resolution in semiconductor manufacturing, it faces a number of persistent challenges. Line-edge roughness (LER) is one of critical issues that significantly affect critical dimension (CD) and device performance because LER does not scale along with feature size. For LER creation and impacts, better understanding of EUVL process mechanism and LER impacts on fin-field-effect-transistors (FinFETs) performance is important for the development of new resist materials and transistor structure. In this paper, for causes of LER, a modeling of EUVL processes with 5-nm pattern performance was introduced using Monte Carlo method by describing the stochastic fluctuation of exposure due to photon-shot noise and resist blur. LER impacts on FinFET performance were investigated using a compact device method. Electric potential and drain current with fin-width roughness (FWR) based on LER and line-width roughness (LWR) were fluctuated regularly and quantized as performance degradation of FinFETs. Full article
(This article belongs to the Special Issue Fabrication and Application of Field Effect Transistor)
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