Recent Advances in Optoelectronic Devices and Materials in South Korea

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D:Materials and Processing".

Deadline for manuscript submissions: closed (30 June 2022) | Viewed by 2069

Special Issue Editor


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Guest Editor
School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
Interests: nanomaterials; semiconductor; electronics; optoelectronics
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Special Issue Information

Dear Colleagues,

Rapid advances in the field of materials science provide opportunities to produce high-performance optoelectronic device applications. Emerging materials such as nanomaterials (e.g., one-dimensional semiconducting carbon nanotubes and two-dimensional semiconducting graphene analogs such as transition metal dichalcogenides, black phosphorus, etc.) and halide perovskites can be considered as leading successors to the conventional silicon-based material system for high-performance optoelectronic device applications including photodetectors, light-emitting diodes, photovoltaics, and lasers.

The Special Issue on “Recent Advances in Optoelectronic Devices and Materials in South Korea” brings together contributions from Korean scientists working on emerging materials and their optoelectronic applications to provide an overview of the current state-of-the-art research. The main topics of the Special Issue will cover emerging nanomaterials, nanomaterials processing, and optoelectronic devices.

We look forward to receiving your submissions!

Prof. Dr. Joohoon Kang
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • semiconducting nanomaterials
  • optoelectronics
  • photodetectors
  • light emitting diodes
  • photovoltaics

Published Papers (1 paper)

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Research

10 pages, 2292 KiB  
Article
Anomalous Photocurrent Reversal Due to Hole Traps in AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes
by Seungyoung Lim, Tae-Soo Kim, Jaesang Kang, Jaesun Kim, Minhyup Song, Hyun Deok Kim and Jung-Hoon Song
Micromachines 2022, 13(8), 1233; https://0-doi-org.brum.beds.ac.uk/10.3390/mi13081233 - 31 Jul 2022
Viewed by 1430
Abstract
The trap states and defects near the active region in deep-ultraviolet (DUV) light-emitting diodes (LED) were investigated through wavelength-dependent photocurrent spectroscopy. We observed anomalous photocurrent reversal and its temporal recovery in AlGaN-based DUV LEDs as the wavelength of illuminating light varied from DUV [...] Read more.
The trap states and defects near the active region in deep-ultraviolet (DUV) light-emitting diodes (LED) were investigated through wavelength-dependent photocurrent spectroscopy. We observed anomalous photocurrent reversal and its temporal recovery in AlGaN-based DUV LEDs as the wavelength of illuminating light varied from DUV to visible. The wavelength-dependent photocurrent measurements were performed on 265 nm-emitting DUV LEDs under zero-bias conditions. Sharp near-band-edge (~265 nm) absorption was observed in addition to broad (300–800 nm) visible-range absorption peaks in the photocurrent spectrum, while the current direction of these two peaks were opposite to each other. In addition, the current direction of the photocurrent in the visible wavelength range was reversed when a certain forward bias was applied. This bias-induced current reversal displayed a slow recovery time (~6 h) when the applied forward voltage was removed. Furthermore, the recovery time showed strong temperature dependency and was faster as the sample temperature increased. This result can be consistently explained by the presence of hole traps at the electron-blocking layer and the band bending caused by piezoelectric polarization fields. The activation energy of the defect state was calculated to be 279 meV using the temperature dependency of the recovery time. Full article
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