Ultrafast Optics and Applications

A special issue of Photonics (ISSN 2304-6732). This special issue belongs to the section "Lasers, Light Sources and Sensors".

Deadline for manuscript submissions: 20 August 2024 | Viewed by 4607

Special Issue Editors

Research Center for Convergence Networks and Ubiquitous Services, University of Science and Technology Beijing, Beijing 100083, China
Interests: nonlinear optics; ultrashort optics; mode-locking lasers; pulse compression; integrated optics
School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China
Interests: fiber lasers; nonlinear optics; mid-infrared lasers
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Guest Editor
Key Laboratory of In-Fiber Integrated Optics, Ministry Education of China, Harbin Engineering University, Harbin 150001, China
Interests: mode-locking lasers and applications; ultrashort optics; nonlinear optics; mid-infrared laser; integrated optics

Special Issue Information

Dear Colleagues,

Ultrafast optics is among the most important areas of optics and deals with ultrafast phenomena, i.e., phenomena which occur at the shortest time scales known in science, ranging from picoseconds to femtoseconds to attoseconds. Ultrafast optics describes the process by which light interacts with matter. Thus, on the one hand, we can use ultrashort pulses to probe ultrafast processes inside matter such as femtosecond dynamics of electrons, light-induced phase changes, chemical reactions, and processes in plasmas. On the other hand, we can use the effect of matter on light to control light amplification, shaping, frequency conversion, and spectrum broadening. As a cutting-edge subject, ultrafast optics has important applications in many fields, covering areas of optical imaging, optical computing, optical sensing and communication, and various types of advanced light sources.

This Special Issue, entitled “Ultrafast Optics and Applications”, will welcome basic, methodological and applied cutting-edge research contributions, as regular and review papers, addressing:

  • Efficient methods for the generation of high-order harmonic, attosecond pulse and attosecond pulse spectroscopy;
  • Advanced technology of mode-locked laser for high peak power and ultrashort pulses;
  • High-energy, short-pulse laser systems in the deep ultraviolet (or extreme deep ultraviolet) and mid-infrared bands;
  • The development of ultrafast imaging and technology for coherent X-ray diffraction imaging;
  • Advanced industrial laser sources to manufacture and process different materials;
  • Ultrafast optical technologies and methods for communication devices, sensors, medical aesthetic tools, etc.

Dr. Chao Mei
Dr. Xinyang Su
Dr. Renlai Zhou
Guest Editors

Manuscript Submission Information

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Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • ultrashort pulses
  • mode-locked lasers
  • high harmonic generation
  • nonlinear effects
  • time-resolved spectroscopy
  • pump–probe measurements
  • optical parametric oscillator
  • nonlinear crystal
  • optical parametric amplification
  • ultraviolet optics

Published Papers (2 papers)

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Research

16 pages, 4492 KiB  
Article
Electrical Relaxation and Transport Properties of ZnGeP2 and 4H-SiC Crystals Measured with Terahertz Spectroscopy
by Vladimir I. Voevodin, Valentin N. Brudnyi, Yury S. Sarkisov, Xinyang Su and Sergey Yu. Sarkisov
Photonics 2023, 10(7), 827; https://0-doi-org.brum.beds.ac.uk/10.3390/photonics10070827 - 16 Jul 2023
Cited by 1 | Viewed by 1089
Abstract
Terahertz photoconductivity and charge carrier recombination dynamics at two-photon (ZnGeP2) and three-photon (4H-SiC) excitation were studied. Thermally annealed, high-energy electron-irradiated and Sc-doped ZnGeP2 crystals were tested. The terahertz charge carrier mobilities were extracted from both the differential terahertz transmission at [...] Read more.
Terahertz photoconductivity and charge carrier recombination dynamics at two-photon (ZnGeP2) and three-photon (4H-SiC) excitation were studied. Thermally annealed, high-energy electron-irradiated and Sc-doped ZnGeP2 crystals were tested. The terahertz charge carrier mobilities were extracted from both the differential terahertz transmission at a specified photoexcitation condition and the Drude–Smith fitting of the photoconductivity spectra. The determined terahertz charge carrier mobility values are ~453 cm2/V·s for 4H-SiC and ~37 cm2/V·s for ZnGeP2 crystals. The charge carrier lifetimes and the contributions from various recombination mechanisms were determined at different injection levels using the model, which takes into account the influence of bulk and surface Shockley–Read–Hall (SRH) recombination, interband radiative transitions and interband and trap-assisted Auger recombination. It was found that ZnGeP2 possesses short charge carrier lifetimes (a~0.01 ps−1, b~6 × 10−19 cm3·ps−1 and c~7 × 10−40 cm6·ps−1) compared with 4H-SiC (a~0.001 ps−1, b~3 × 10−18 cm3·ps−1 and c~2 × 10−36 cm6·ps−1), i.e., τ~100 ps and τ~1 ns at the limit of relatively low injection, when the contribution from Auger and interband radiative recombination is small. The thermal annealing of as-grown ZnGeP2 crystals and the electron irradiation reduced the charge carrier lifetime, while their doping with 0.01 mass % of Sc increased the charger carrier lifetime and reduced mobility. It was found that the dark terahertz complex conductivity of the measured crystals is not fitted by the Drude–Smith model with reasonable parameters, while their terahertz photoconductivity can be fitted with acceptable accuracy. Full article
(This article belongs to the Special Issue Ultrafast Optics and Applications)
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13 pages, 4379 KiB  
Article
Non-Collinear Attosecond Streaking without the Time Delay Scan
by Peng Xu, Xianglin Wang, Huabao Cao, Hao Yuan, Liang-Wen Pi, Yishan Wang, Yuxi Fu, Yonglin Bai and Wei Zhao
Photonics 2023, 10(3), 331; https://0-doi-org.brum.beds.ac.uk/10.3390/photonics10030331 - 20 Mar 2023
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Abstract
Attosecond streaking provides an extremely high temporal resolution for characterizing light pulses and photoionization processes with attosecond (10−18 s) accuracy, which employs a laser as a streaking field to deflect electrons generated by photoionization. The current attosecond streaking requires a time delay [...] Read more.
Attosecond streaking provides an extremely high temporal resolution for characterizing light pulses and photoionization processes with attosecond (10−18 s) accuracy, which employs a laser as a streaking field to deflect electrons generated by photoionization. The current attosecond streaking requires a time delay scan between the attosecond pulses and streaking field with attosecond accuracy and a femtosecond range, which is difficult to realize real-time measurement. In this study, we theoretically propose a non-collinear attosecond streaking scheme without the time delay scan, enabling real-time and even the potential to perform single-shot attosecond pulse measurement. In the proposal, time-delay information is projected into longitudinal space, both horizontally and vertically, enabling attosecond pulse characterization with temporal-spatial coupling. From our calculation, down to 70 as pulses with pulse front and wavefront tilt are characterized with high accuracy. Our study not only provides a method toward real-time attosecond pulse measurement, but also an approach for attosecond pump-probe experiments without time delay scan. Full article
(This article belongs to the Special Issue Ultrafast Optics and Applications)
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