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Preparation, Characterization and Applications of Thin Film Transistors
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Preparation, Characterization and Applications of Thin Film Transistors

A special issue of Coatings (ISSN 2079-6412). This special issue belongs to the section "Thin Films".

Deadline for manuscript submissions: closed (20 September 2022) | Viewed by 14996

Special Issue Editor

Prof. Chunkai Wang

E-Mail Website
Guest Editor
Department of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan City 710, Taiwan
Interests: semiconductor physics and devices; optoelectronic devices; thin-film deposition; thin-film transistors (TFTs)
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

We would like to invite you to submit your work to this Special Issue. The Special Issue provides a forum for materials scientists and engineers, physicists, and chemists to rapidly communicate on “Preparation, Characterization and Applications of Thin Film Transistors”. Metal oxide thin films or transparent conducting oxide films are very suitable for the application of thin-film transistors (TFTs) owing to their advantages of high mobility, good transparency, and ideal uniformity. Various techniques, such as pulse laser deposition, radio frequency magnetron sputtering, chemical vapor deposition, atomic layer deposition, and sol–gel coating are used for growing metal oxide thin films and transparent conducting oxide films. The aims of Special Issue broadly include the growth methods and mechanisms of thin films, unique methods for analyzing these thin films, and optical and electrical properties for TFT applications. In addition, this Special Issue also invites papers in a very wide range of related research fields.

Prof. Chunkai Wang
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Coatings is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • thin-film transistors
  • metal oxide materials
  • oxide semiconductor materials
  • crystal growth
  • physical, structural, and optical characterization of materials
  • oxide-based sensors

Published Papers (3 papers)

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Research

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14 pages, 7460 KiB  
Article
The Fabrication of Indium–Gallium–Zinc Oxide Sputtering Targets with Various Gallium Contents and Their Applications to Top-Gate Thin-Film Transistors
by Tsung-Cheng Tien, Jyun-Sheng Wu, Tsung-Eong Hsieh and Hsin-Jay Wu
Coatings 2022, 12(8), 1217; https://0-doi-org.brum.beds.ac.uk/10.3390/coatings12081217 - 19 Aug 2022
Cited by 1 | Viewed by 1654
Abstract
We prepared amorphous indium–gallium–zinc oxide (a-IGZO) thin films with various Ga content ratios and investigated their feasibility as the active channel layers of top-gate thin-film transistors (TFT). First, the 2-inch IGZO sputtering targets with stoichiometric ratios of InGaZn2O5 [...] Read more.
We prepared amorphous indium–gallium–zinc oxide (a-IGZO) thin films with various Ga content ratios and investigated their feasibility as the active channel layers of top-gate thin-film transistors (TFT). First, the 2-inch IGZO sputtering targets with stoichiometric ratios of InGaZn2O5, InGaZnO4, and InGa2ZnO5.5 were fabricated using In2O3, Ga2O3, and ZnO oxide powders as raw materials via sintering treatments at temperatures ranging from 900 °C to 1300 °C for 6 h or 8 h. X-ray diffraction analysis indicated that the InGaZn2O5 and InGaZnO4 targets are single-phase structures whereas the InGa2ZnO5.5 target is a two-phase structure. Hall effect measurement indicated that the a-InGaZn2O5 and a-InGaZnO4 layers possess a carrier concentration (N) of about 1019 cm−3 and a resistivity (ρ) of about 10−2 Ω·cm; however, the N of the a-InGa2ZnO5.5 layer is only 1017 cm−3, and the ρ is about 1 to 4 Ω·cm. Moreover, the a-InGaZn2O5 layer exhibited the highest Hall-effect mobility (μHall) of 21.17 cm2·V−1·sec−1. This indicated that the impedance of Ga3+ ions to carrier migration is the main factor affecting the electrical properties of a-IGZO layers. Ga content in the a-IGZO channel similarly affects the performance of the TFT devices prepared in this study. The annealing at 300 °C for 1 h in an ambient atmosphere was found to significantly improve the electrical properties of the TFT devices. The best performance was observed in the a-InGaZnO4 TFT sample subjected to post-annealing at 300 °C with Vth = −0.85 V, μFE = 8.46 cm2, V−1·sec−1, SS = 2.31, V·decade−1, and Ion/Ioff = 2.9 × 104. Full article
(This article belongs to the Special Issue Preparation, Characterization and Applications of Thin Film Transistors)
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11 pages, 2332 KiB  
Article
Quantitative Analysis of Positive-Bias-Stress-Induced Electron Trapping in the Gate Insulator in the Self-Aligned Top Gate Coplanar Indium–Gallium–Zinc Oxide Thin-Film Transistors
by Dae-Hwan Kim, Hwan-Seok Jeong, Dong-Ho Lee, Kang-Hwan Bae, Sunhee Lee, Myeong-Ho Kim, Jun-Hyung Lim and Hyuck-In Kwon
Coatings 2021, 11(10), 1192; https://0-doi-org.brum.beds.ac.uk/10.3390/coatings11101192 - 29 Sep 2021
Cited by 6 | Viewed by 3458
Abstract
We experimentally extracted the positive bias temperature stress (PBTS)-induced trapped electron distribution within the gate dielectric in self-aligned top-gate (SA-TG) coplanar indium–gallium–zinc oxide (IGZO) thin-film transistors (TFTs) using the analytical threshold voltage shift model. First, we carefully examined the effects of PBTS on [...] Read more.
We experimentally extracted the positive bias temperature stress (PBTS)-induced trapped electron distribution within the gate dielectric in self-aligned top-gate (SA-TG) coplanar indium–gallium–zinc oxide (IGZO) thin-film transistors (TFTs) using the analytical threshold voltage shift model. First, we carefully examined the effects of PBTS on the subgap density of states in IGZO TFTs to exclude the effects of defect creation on the threshold voltage shift due to PBTS. We assumed that the accumulated electrons were injected into the gate dielectric trap states near the interface through trap-assisted tunneling and were consequently moved to the trap states, which were located further away from the interface, through the Poole–Frenkel effect. Accordingly, we quantitatively analyzed the PBTS-induced electron trapping. The experimental results showed that, in the fabricated IGZO TFTs, the electrons were trapped in the shallow and deep trap states simultaneously owing to PBTS. Electrons trapped in the shallow state were easily detrapped after PBTS termination; however, those trapped in the deep state were not. We successfully extracted the PBTS-induced trapped electron data within the gate dielectric in the fabricated SA-TG coplanar IGZO TFTs by using the proposed method. Full article
(This article belongs to the Special Issue Preparation, Characterization and Applications of Thin Film Transistors)
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Review

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25 pages, 11119 KiB  
Review
Recent Advances in Metal-Oxide Thin-Film Transistors: Flexible/Stretchable Devices, Integrated Circuits, Biosensors, and Neuromorphic Applications
by Yunchae Jeon, Donghyun Lee and Hocheon Yoo
Coatings 2022, 12(2), 204; https://0-doi-org.brum.beds.ac.uk/10.3390/coatings12020204 - 4 Feb 2022
Cited by 27 | Viewed by 8971
Abstract
Thin-film transistors using metal oxides have been investigated extensively because of their high transparency, large area, and mass production of metal oxide semiconductors. Compatibility with conventional semiconductor processes, such as photolithography of the metal oxide offers the possibility to develop integrated circuits on [...] Read more.
Thin-film transistors using metal oxides have been investigated extensively because of their high transparency, large area, and mass production of metal oxide semiconductors. Compatibility with conventional semiconductor processes, such as photolithography of the metal oxide offers the possibility to develop integrated circuits on a larger scale. In addition, combinations with other materials have enabled the development of sensor applications or neuromorphic devices in recent years. Here, this paper provides a timely overview of metal-oxide-based thin-film transistors focusing on emerging applications, including flexible/stretchable devices, integrated circuits, biosensors, and neuromorphic devices. This overview also revisits recent efforts on metal oxide-based thin-film transistors developed with high compatibility for integration to newly reported applications. Full article
(This article belongs to the Special Issue Preparation, Characterization and Applications of Thin Film Transistors)
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