Advanced CMOS Devices and Applications, 2nd Edition

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Semiconductor Devices".

Deadline for manuscript submissions: 15 November 2024 | Viewed by 533

Special Issue Editors


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Guest Editor
College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
Interests: advanced logic CMOS technologies; novel transistor architectures; device physics
Special Issues, Collections and Topics in MDPI journals

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Guest Editor
School of Integrated Circuits, East China Normal University, Shanghai 200050, China
Interests: CMOS
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

We are pleased to invite you to submit your abstracts in fields related to advanced CMOS transistors and emerging non-volatile memories, including material fundamentals, process technologies, device physics, novel device architectures, and neuromorphic computing applications. This Special Issue aims to provide an overview of the recent progress in advanced CMOS and memory technologies from research scientists and engineers working in the fields of semiconductor devices, materials, and reliability and to discuss the opportunities and challenges in these fields, as well as any new findings, new phenomena, and state-of-the-art technologies related to advanced CMOS and memory devices. Papers related to device and material technologies for advanced CMOS and emerging non-volatile memories for neuromorphic computing applications are solicited, with topics including the following:

(1) Advanced CMOS device architectures for high performance, ultra-low-power consumption, and reliability improvement;

(2) Emerging materials and advanced process technologies for high-mobility channels, gate stack formation, S/D contact, and junctions;

(3) Device physics, novel characterization methods, TCAD simulation, and ab initio calculation for advanced CMOS and emerging non-volatile memories;

(4) Conventional memories and emerging memories such as ReRAM, MRAM, PCRAM, and FeRAM;

(5) Memory device physics, reliability, and modeling;

(6) Synaptic devices for neuromorphic computing applications.

Prof. Dr. Choonghyun Lee
Prof. Dr. Yi Zhao
Guest Editors

Manuscript Submission Information

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

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Keywords

  • advanced logic CMOS transistor
  • emerging non-volatile memories
  • neuromorphic computing
  • high-mobility channel
  • device physics
  • novel characterization method
  • simulation and modeling

Published Papers (1 paper)

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Research

7 pages, 2944 KiB  
Communication
Impact of Al Alloying/Doping on the Performance Optimization of HfO2-Based RRAM
by Huikai He, Xiaobo Yuan, Wenhao Wu, Choonghyun Lee, Yi Zhao and Zongfang Liu
Electronics 2024, 13(12), 2384; https://0-doi-org.brum.beds.ac.uk/10.3390/electronics13122384 - 18 Jun 2024
Viewed by 211
Abstract
Al alloying/doping in HfO2-based resistive random-access memory (RRAM) has been proven to be an effective method for improving the low-resistance state (LRS) retention. However, a detailed understanding of Al concentration on oxygen vacancy migration and resistive switching (RS) behaviors still needs [...] Read more.
Al alloying/doping in HfO2-based resistive random-access memory (RRAM) has been proven to be an effective method for improving the low-resistance state (LRS) retention. However, a detailed understanding of Al concentration on oxygen vacancy migration and resistive switching (RS) behaviors still needs to be included. Herein, the impact of Al concentration on the RS properties of the TiN/Ti/HfAlO/TiN RRAM devices is addressed. Firstly, it is found that the forming voltage, SET voltage, and RESET voltage can be regulated by varying the Al doping concentration. Moreover, we have demonstrated that the device with 15% Al shows the minimum cycle-to-cycle variability (CCV) and superior endurance (over 106). According to density-functional theory (DFT) calculations, it is found that the increased operation voltage, improved uniformity, and improved endurance are attributed to the elevated migration barrier of oxygen vacancy through Al doping. In addition, LRS retention characteristics of the TiN/Ti/HfAlO/TiN devices with different Al concentrations are compared. It is observed that the LRS retention is greatly enhanced due to the suppressed lateral diffusion process of oxygen vacancy through Al doping. This study demonstrates that Al alloying/doping greatly affects the RS behaviors of HfO2-based RRAM and provides a feasible way to improve the RS properties through changing the Al concentration. Full article
(This article belongs to the Special Issue Advanced CMOS Devices and Applications, 2nd Edition)
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