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Design and Processing of Piezoelectric/Ferroelectric Ceramics

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Advanced and Functional Ceramics and Glasses".

Deadline for manuscript submissions: 10 July 2024 | Viewed by 2447

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Guest Editor
School of Materials Science and Engineering, Chonnam National University, Gwangju 61186, Korea
Interests: abnormal grain growth; lead-free piezoelectric ceramics; single-crystal growth; templated grain growth
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Piezoelectric and ferroelectric ceramics have numerous applications such as ultrasonic motors, sensors and capacitors, while new applications such as energy harvesting and high-temperature capacitors are constantly being developed. Piezoelectric and ferroelectric ceramics appear in many of our everyday electronic devices, as well as finding industrial and medical applications e.g. in semiconductor processing and ultrasound imaging. The design and processing of these materials is critical to their function. Piezoelectric and ferroelectric ceramics can be designed on many overlapping levels: at the microstructural level (single crystals, polycrystalline ceramics, textured ceramics); at the ferroelectric domain level (domain engineering, slush polar structure, normal/relaxor ferroelectrics, incipient ferroelectric and electrostrictive materials); at the structural level (phase boundary engineering); and at the compositional level (dopant addition, solid solution formation). The processing of these materials includes conventional sintering, multilayer processing (multilayer capacitors and actuators), thick/thin film processing, pressure-assisted sintering (hot pressing, spark plasma sintering) and novel techniques such as flash sintering and cold sintering. It is my pleasure to invite you to submit a manuscript to this Special Issue, which will collate the latest research on these topics in both lead-based and lead-free materials.

Prof. Dr. John G. Fisher
Guest Editor

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Keywords

  • piezoelectric
  • ferroelectric
  • microstructure
  • domain engineering
  • phase boundary
  • sintering

Published Papers (2 papers)

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Research

12 pages, 4026 KiB  
Article
Crystal Structural Characteristics and Electrical Properties of (Ba0.7Sr0.3-xCax)(Ti0.9Zr0.1)O3 Ceramics Prepared Using the Citrate Gelation Method
by Jae-Young Jeong, Si-Hyun Kim, Ju-Hye Kim, Jae-Hoon Park, Da-Som Jung and Eung-Soo Kim
Materials 2023, 16(24), 7551; https://0-doi-org.brum.beds.ac.uk/10.3390/ma16247551 - 07 Dec 2023
Viewed by 645
Abstract
The electrical properties of (Ba0.7Sr0.3-xCax)(Ti0.9Zr0.1)O3 (0 ≤ x ≤ 0.2) (BSCTZ) ceramics prepared using citrate gelation (CG) method were investigated by substituting Ca2+ ions for the Sr2+ sites based [...] Read more.
The electrical properties of (Ba0.7Sr0.3-xCax)(Ti0.9Zr0.1)O3 (0 ≤ x ≤ 0.2) (BSCTZ) ceramics prepared using citrate gelation (CG) method were investigated by substituting Ca2+ ions for the Sr2+ sites based on the structural characteristics of the ceramics. BSCTZ was sintered for 3 h at 1300 °C, lower than the temperature (1550 °C) at which the specimens prepared using the solid-state reaction (SSR) method were sintered, which lasted for 6 h. As the amount of substituted Ca2+ ions increased, the unit cell volume of the BSCTZ decreased because of the smaller ionic radius of the Ca2+ ions compared to the Sr2+ ions. The dielectric constant of BaTiO3-based ceramics is imparted by factors such as the tetragonality and B-site bond valence of the ceramics. Although the ceramic tetragonality increased with Ca2+ ion substitution, the x = 0.05 specimens exhibited the highest dielectric constant. The decrease in the dielectric constant of the sintered x > 0.05 specimens was attributed to the increase in the B-site bond valence of the ABO3 perovskite structure. Owing to the large number of grain boundaries, the breakdown voltage (6.6839 kV/mm) of the BSCTZ prepared using the CG method was significantly improved in relation to that (2.0043 kV/mm) of the specimen prepared using the SSR method. Full article
(This article belongs to the Special Issue Design and Processing of Piezoelectric/Ferroelectric Ceramics)
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26 pages, 10213 KiB  
Article
Comparison of (K0.5Na0.5)NbO3 Single Crystals Grown by Seed-Free and Seeded Solid-State Single Crystal Growth
by John G. Fisher, Su-Hyeon Sim, Trung Thành Ðoàn, Eugenie Uwiragiye, Jungwi Mok and Junseong Lee
Materials 2023, 16(10), 3638; https://0-doi-org.brum.beds.ac.uk/10.3390/ma16103638 - 10 May 2023
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Abstract
(K0.5Na0.5)NbO3-based piezoelectric ceramics are of interest as a lead-free replacement for Pb(Zr,Ti)O3. In recent years, single crystals of (K0.5Na0.5)NbO3 with improved properties have been grown by the seed-free solid-state crystal [...] Read more.
(K0.5Na0.5)NbO3-based piezoelectric ceramics are of interest as a lead-free replacement for Pb(Zr,Ti)O3. In recent years, single crystals of (K0.5Na0.5)NbO3 with improved properties have been grown by the seed-free solid-state crystal growth method, in which the base composition is doped with a specific amount of donor dopant, inducing a few grains to grow abnormally large and form single crystals. Our laboratory experienced difficulty obtaining repeatable single crystal growth using this method. To try and overcome this problem, single crystals of 0.985(K0.5Na0.5)NbO3-0.015Ba1.05Nb0.77O3 and 0.985(K0.5Na0.5)NbO3-0.015Ba(Cu0.13Nb0.66)O3 were grown both by seed-free solid-state crystal growth and by seeded solid-state crystal growth using [001] and [110]-oriented KTaO3 seed crystals. X-ray diffraction was carried out on the bulk samples to confirm that single-crystal growth had taken place. Scanning electron microscopy was used to study sample microstructure. Chemical analysis was carried out using electron-probe microanalysis. The single crystal growth behaviour is explained using the mixed control mechanism of grain growth. Single crystals of (K0.5Na0.5)NbO3 could be grown by both seed-free and seeded solid-state crystal growth. Use of Ba(Cu0.13Nb0.66)O3 allowed a significant reduction in porosity in the single crystals. For both compositions, single crystal growth on [001]-oriented KTaO3 seed crystals was more extensive than previously reported in the literature. Large (~8 mm) and relatively dense (<8% porosity) single crystals of 0.985(K0.5Na0.5)NbO3-0.015Ba(Cu0.13Nb0.66)O3 can be grown using a [001]-oriented KTaO3 seed crystal. However, the problem of repeatable single crystal growth remains. Full article
(This article belongs to the Special Issue Design and Processing of Piezoelectric/Ferroelectric Ceramics)
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