Materials

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Prof. Dr. Xiuwei Fu

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Guest Editor

State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
Interests: crystal growth; laser crystal; piezoelectric and ferroelectric; magneto-optic crystal

Dr. Dongsheng Yuan

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Guest Editor

National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
Interests: functional inorganic crystals; scintillators; crystal growth technology; optical properties
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Dr. Wenxiang Mu

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Institute of Novel Semiconductors, Institute of Crystal Materials, Shandong University, Jinan 250100, China
Interests: wide-bandgap semiconductor

Dr. Hezhi Zhang

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Guest Editor

School of Microelectronics, Dalian University of Technology, Dalian 116024, China
Interests: wide- and ultra-wide bandgap semiconductor

Special Issue Information

Dear Colleagues,

The past decades have witnessed the rapid progress of crystalline materials and applications. Crystalline materials can realize the conversion of various energy forms such as electricity, magnetism, light, sound and force, thus they are indispensable and important materials in the development of modern science and technology. Especially due to the rapid development of solid state microelectronics, a large variety of crystalline materials are needed, including semiconductor crystals, laser crystals, scintillator crystals, optical crystals, superhard crystals, insulating crystals, piezoelectric crystals. Crystal materials are at the forefront of the development of materials science, which is closely related to space science, electronics, lasers, new energy development, biomedicine and other new technologies.

This Special Issue, “Crystalline Materials: Growth, Characterization, and Devices”, aims to collect original papers and review articles regarding all kinds of crystals and relevant aspects of these materials. Examples of contributions include but are not limited to the following topics:

Growth and characterization of crystals.
Principle of crystal growth and numerical simulations.
Crystalline material design, new materials, and structure.
Simulation and modeling for understanding structure-property relationships.
Preparation of nanocrystalline materials.
Crystal structure analysis and crystal defects.
Applications and devices of crystals.

Prof. Dr. Xiuwei Fu
Dr. Dongsheng Yuan
Dr. Wenxiang Mu
Dr. Hezhi Zhang
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

crystalline materials
crystal growth
crystallization mechanisms
numerical simulations
crystal structure
crystal defects
nanocrystals
crystal devices

Published Papers (2 papers)

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Research

11 pages, 3725 KiB

Open AccessArticle

Growth, Spectroscopy, and Laser Performance of a 2.79 μm Er: YSGG Single Crystal Fibers

by Baiyi Wu, Meng Wang, Jian Zhang, Zhitai Jia and Zefeng Wang

Materials 2024, 17(2), 429; https://0-doi-org.brum.beds.ac.uk/10.3390/ma17020429 - 15 Jan 2024

Viewed by 660

Abstract

Single crystal fibers combine the great specific surface area of fibers and the single crystal property of the bulk crystal which shows great potential for a high-power laser. For an Er-doped crystal, due to the fluorescence quenching at the 3 μm wavelength, high Er doping is necessary to increase the fluorescent up-conversion for the breaking limitation. However, a high Er doping concentration must lead to high heat accumulation, resulting in poor laser performance. Compared with an Er-doped bulk crystal, Er-doped SCF has the great potential to remove the heat in the crystal, and it is easy to obtain a high power. In this paper, Er: Y₃Sc₂Ga₃O₁₂ (Er: YSGG) single crystals were successfully grown using the micro-pulling-down method (μ-PD). Owing to the stably grown interface, the diameter of the crystal is 2 mm with a length up to 80 mm. Then, the measurements of Laue spots and Er³⁺ distribution indicated that our crystals have a high quality. Based on the as-prepared Er: YSGG SCF, the continuous-wave (CW) laser operations at 2794 nm were realized. The maximum output was 166 mW with a slope efficiency of up to 10.99%. These results show that Er: YSGG SCF is a suitable material for future high-power 3 μm laser operation. Full article

(This article belongs to the Special Issue Crystalline Materials: Growth, Characterization, and Devices)

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9 pages, 5836 KiB

Open AccessArticle

Coefficients of Thermal Expansion in La₃Ga₅SiO₁₄ and Ca₃TaGa₃Si₂O₁₄ Crystals

by Dmitry Roshchupkin and Dmitry Kovalev

Materials 2023, 16(12), 4470; https://0-doi-org.brum.beds.ac.uk/10.3390/ma16124470 - 19 Jun 2023

Cited by 1 | Viewed by 1076

Abstract

The ordered Ca₃TaGa₃Si₂O₁₄ and disordered La₃Ga₅SiO₁₄ crystals of the lantangallium silicate family were grown via the Czochralski method. The independent coefficients of thermal expansion of crystals

α_{c}

and

α_{a}

[...] Read more.

α_{c}

and

α_{a}

were determined using X-ray powder diffraction based on the analysis of X-ray diffraction spectra measured in the temperature range of 25~1000 °C. It is shown that, in the temperature range of 25~800 °C, the thermal expansion coefficients are linear. At temperatures above 800 °C, there is a nonlinear character of the thermal expansion coefficients, associated with a decrease in the Ga content in the crystal lattice. Full article

(This article belongs to the Special Issue Crystalline Materials: Growth, Characterization, and Devices)

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