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New Quantum Materials

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Quantum Materials".

Deadline for manuscript submissions: closed (20 October 2022) | Viewed by 2560

Special Issue Editor

Department of Physics, University of Colorado Boulder, Boulder, CO, USA
Interests: spin–orbit interactions; electronic correlations; discovery and study of new materials; physical properties of these materials as a function of the magnetic field; electrical current; pressure and temperature

Special Issue Information

Quantum materials feature electronic correlations and/or spin–orbit interactions and a delicate interplay between spin, charge, orbit, and lattice degrees of freedom. These materials are constantly surprising us with novel phenomena and challenging existing theoretical models. The surprising insulating behavior in binary 3D-transition metal oxides reported in 1937 led to the realization of the importance of electronic correlations first proposed by Peierls and Mott; the high-temperature superconductivity in ternary 3d-transition metal oxides discovered in 1986 by Bednorz and Muller violates the Bardeen–Cooper–Schrieffer theory that otherwise perfectly describes conventional superconductivity. Establishing an adequate mechanism driving the superconductivity has remained a profound intellectual challenge to this day. In 1994, the discovery of an exotic superconducting state in Sr2RuO4 by Maeno et al. drew interest toward 4d-electron-based ruthenates. In the early 2000s, the realization that a novel variant of the Mott state was at play in Sr2IrO4 has provided an impetus for a burgeoning group of studies of the influence of strong spin–orbit interactions in correlated 4D- and 5D-transition metal oxides. A growing number of theoretical proposals focusing on effects of spin–orbit interactions, such as quantum spin Hall effect in graphene in 2005 by Kane and Mele and its experimental confirmation in HgTe in 2007 by Konig et al., have led to the explosion of interest in high-Z materials (Z being atomic number) with band inversion, such as topological insulators, and the other novel topological materials that followed.

It is clear that the advancement of condensed matter physics has been largely dependent on the arduous path toward understanding these materials. Condensed matter and materials physicists, confronted with an ever-increasing pace and competition in research, are beginning to re-examine the existing materials and aggressively explore new ones for discovery of emergent quantum phenomena and tackling intellectual challenges. This Special Issue on new quantum materials provides a timely forum for expedited communications focused on most recent developments in the ever-expanding frontiers of quantum materials.

Prof. Gang Cao
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Mott insulators
  • superconductors
  • correlated and spin–orbit-coupled materials
  • topological insulators
  • Weyl semimetals
  • Dirac electron materials
  • van der Waals materials

Published Papers (1 paper)

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Research

14 pages, 688 KiB  
Article
Effect of Sr Doping on Structural and Transport Properties of Bi2Te3
by Yurii G. Selivanov, Victor P. Martovitskii, Mikhail I. Bannikov and Aleksandr Y. Kuntsevich
Materials 2021, 14(24), 7528; https://0-doi-org.brum.beds.ac.uk/10.3390/ma14247528 - 08 Dec 2021
Cited by 1 | Viewed by 2096
Abstract
Search for doped superconducting topological insulators is of prime importance for new quantum technologies. We report on fabrication of Sr-doped Bi2Te3 single crystals. We found that Bridgman grown samples have p-type conductivity in the low 1019 cm [...] Read more.
Search for doped superconducting topological insulators is of prime importance for new quantum technologies. We report on fabrication of Sr-doped Bi2Te3 single crystals. We found that Bridgman grown samples have p-type conductivity in the low 1019 cm3, high mobility of 4000 cm2V1s1, crystal structure independent on nominal dopant content, and no signs of superconductivity. We also studied molecular beam epitaxy grown SrxBi2xTe3 films on lattice matched (1 1 1) BaF2 polar surface. Contrary to the bulk crystals thin films have n-type conductivity. Carrier concentration, mobility and c-lattice constant demonstrate pronounced dependence on Sr concentration x. Variation of the parameters did not lead to superconductivity. We revealed, that transport and structural parameters are governed by Sr dopants incorporation in randomly inserted Bi bilayers into the parent matrix. Thus, our data shed light on the structural position of dopant in Bi2Te3 and should be helpful for further design of topological insulator-based superconductors. Full article
(This article belongs to the Special Issue New Quantum Materials)
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