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Synthesis of Silicon Carbide—from Nano- to Bulk Single Crystals
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Synthesis of Silicon Carbide—from Nano- to Bulk Single Crystals

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Chemistry".

Deadline for manuscript submissions: closed (20 June 2022) | Viewed by 8173

Special Issue Editor

Dr. Didier Chaussende

E-Mail Website
Guest Editor
Universite Grenoble Alpes, CNRS, SIMaP, Grenoble, France
Interests: crystal growth from solution; crystal growth from vapor; nucleation and growth; doping; wide bandgap semiconductors; carbides; nitrides; new process concepts; high temperatures; surface mechanisms

Special Issue Information

Dear Colleagues,

Silicon carbide (SiC) is an advanced functional ceramic offering a unique combination of chemical, physical, and mechanical properties. This makes it one of the best materials for a wide variety of applications, such as for transportation, nuclear, concentrated solar, and aerospace, as well as more generally for all applications where long-term reliability and lifetime performance are needed. SiC is also a wide bandgap semiconductor, which is currently driving a profound evolution of power electronics, by significantly improving the efficiency of electrical power conversion and distribution. More recently, SiC has also shown its strong potential for biotechnologies, notably thanks to its demonstrated biocompatibility, and as a single photon emitter, the latter being accompanied by a strong effervescence from the scientific community. This material is therefore ideal for many applications, and will certainly be widely developed for even more unexpected applications.

From a scientific point of view, SiC has always been, and still is, a fascinating compound facing extreme not so conciliatory thermodynamics and has a tendency to crystallize in different polytypes. Mastering the material at different scales, from its synthesis to its shaping (single crystals, deposits or epitaxial layers, nanowires, nanoparticles, porous, amorphous thin films, etc.) is essential in order to optimize its functionalities.

This Special Issue aims to be a platform for papers dealing with the synthesis of silicon carbide, whatever the method (CVD, PVD, PVT, PDC, carboreduction, Sol–Gel, solution growth, etc.), characterizations of the materials, and the study and optimization of functional properties. Any contributions bringing new light or a better understanding on SiC are encouraged. Regular papers, communications, and reviews are all very welcome, whether of a theoretical or experimental nature.

Dr. Didier Chaussende
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • silicon carbide
  • nucleation and growth mechanisms
  • thin films and epitaxy
  • doping
  • defects
  • interfaces
  • structure–property relationships
  • processes

Published Papers (3 papers)

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Research

14 pages, 6281 KiB  
Article
Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process
by Johannes Steiner and Peter J. Wellmann
Materials 2022, 15(5), 1897; https://0-doi-org.brum.beds.ac.uk/10.3390/ma15051897 - 03 Mar 2022
Cited by 11 | Viewed by 3347
Abstract
Nitrogen incorporation changes the lattice spacing of SiC and can therefore lead to stress during physical vapor transport (PVT). The impact of the nitrogen-doping concentration during the initial phase of PVT growth of 4H-SiC was investigated using molten potassium hydroxide (KOH) etching, and [...] Read more.
Nitrogen incorporation changes the lattice spacing of SiC and can therefore lead to stress during physical vapor transport (PVT). The impact of the nitrogen-doping concentration during the initial phase of PVT growth of 4H-SiC was investigated using molten potassium hydroxide (KOH) etching, and the doping concentration and stress was detected by Raman spectroscopy. The change in the coefficient of thermal expansion (CTE) caused by the variation of nitrogen doping was implemented into a numerical model to quantitatively determine the stress induced during and after the crystal growth. Furthermore, the influence of mechanical stress related to the seed-mounting method was studied. To achieve this, four 100 mm diameter 4H-SiC crystals were grown with different nitrogen-doping distributions and seed-mounting strategies. It was found that the altered CTE plays a major role in the types and density of defect present in the grown crystal. While the mounting method led to increased stress in the initial seeding phase, the overall stress induced by inhomogeneous nitrogen doping is orders of magnitude higher. Full article
(This article belongs to the Special Issue Synthesis of Silicon Carbide—from Nano- to Bulk Single Crystals)
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8 pages, 2168 KiB  
Article
Contribution of Dislocations in SiC Seed Crystals on the Melt-Back Process in SiC Solution Growth
by Sakiko Kawanishi, Hiroyuki Shibata and Takeshi Yoshikawa
Materials 2022, 15(5), 1796; https://0-doi-org.brum.beds.ac.uk/10.3390/ma15051796 - 27 Feb 2022
Cited by 5 | Viewed by 2173
Abstract
The melt-back process has a significant effect on the quality of solution-grown SiC crystals. However, the phenomena surrounding the SiC dissolution into the molten alloy during the melt-back process have not been clarified. In this study, the behavior of 4H-SiC dissolution into molten [...] Read more.
The melt-back process has a significant effect on the quality of solution-grown SiC crystals. However, the phenomena surrounding the SiC dissolution into the molten alloy during the melt-back process have not been clarified. In this study, the behavior of 4H-SiC dissolution into molten alloy was investigated by using high-temperature in situ observation and subsequent KOH etching, and the effects of different doping conditions and crystal polarity were studied. Local dissolutions with hexagonal pyramid-shape originating from threading screw dislocation (TSD) were observed on the C face of n-type SiC with light nitrogen doping. Our analysis of their behavior revealed that the process was governed by the spiral dissolution. In addition to the dissolution at TSD, local dissolutions at threading-edge dislocations were observed on the Si face of the same crystal. The shape of the local dissolution at the dislocation was significantly affected by the doping conditions and the polarity of the SiC crystal. This local dissolution may occur during the melt-back process, suggesting that it is important to promote the dissolution while maintaining a smooth interface through the selection of the seed crystal and by keeping the degree of interface undersaturation small. Full article
(This article belongs to the Special Issue Synthesis of Silicon Carbide—from Nano- to Bulk Single Crystals)
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Graphical abstract

12 pages, 2435 KiB  
Article
Undulated Step Structure on the (0001¯) Facet of Physical Vapor Transport-Grown 4H-SiC Crystals
by Hiroaki Shinya, Masataka Nakano and Noboru Ohtani
Materials 2021, 14(22), 6816; https://0-doi-org.brum.beds.ac.uk/10.3390/ma14226816 - 11 Nov 2021
Cited by 1 | Viewed by 1853
Abstract
The step structure on the (0001¯)C facet of 4H-SiC boules grown by the physical vapor transport growth method with different nitrogen doping concentrations was examined in various scales, using different types of microscopy, such as differential interference contrast optical microscopy [...] Read more.
The step structure on the (0001¯)C facet of 4H-SiC boules grown by the physical vapor transport growth method with different nitrogen doping concentrations was examined in various scales, using different types of microscopy, such as differential interference contrast optical microscopy (DICM) and atomic force microscopy (AFM). DICM observations unveiled characteristic macroscopic surface features of the facet dependent on the nitrogen doping concentration. AFM observations revealed the existence of step trains of half unit-cell height (0.5 nm) on the facet and found that their separation was undulated with a characteristic wavelength dependent on the nitrogen doping concentration; the higher the nitrogen concentration, the longer was the undulation wavelength of step separation. Based on these results, we discussed the origin and formation mechanism of the separation-undulated step structure observed on the (0001¯)C facet of nitrogen-doped 4H-SiC boules. Full article
(This article belongs to the Special Issue Synthesis of Silicon Carbide—from Nano- to Bulk Single Crystals)
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