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Wide-Bandgap Materials and Applications
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Wide-Bandgap Materials and Applications

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: closed (20 February 2022) | Viewed by 8854

Special Issue Editors

Dr. Carlo De Santi

E-Mail Website
Guest Editor
Department of Information Engineering, University of Padova, Via Gradenigo 6/B, I-35131 Padova, Italy
Interests: device characterization; device modeling; device reliability; electronics; optoelectronics; wide-bandgap semiconductors
Prof. Dr. Matteo Meneghini

E-Mail Website
Guest Editor
Department of Information Engineering, University of Padova, Via Gradenigo 6/B, I-35131 Padova, Italy
Interests: characterization; reliability; compound semiconductor devices; LEDs; laser diodes; HEMTs; solar cells
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Wide-bandgap semiconductors are rapidly emerging as disruptive materials for a wide range of applications. Even though some products are already available in the market, efforts are still needed to improve the performance and reliability of the devices as well as to identify novel materials and structures toward widening the possible application fields.
In order to showcase the most recent advancements, we are requesting submissions for a Special Issue on wide-bandgap materials and their applications. Topics of interest for this Special Issue include, but are not limited to:
• Wide-bandgap elemental and compound semiconductors: gallium nitride, silicon carbide, gallium oxide, aluminum nitride, boron nitride, diamond, to name but a few examples;
• Materials and devices for power electronics, RF applications, and optoelectronics, including extreme environments such as space applications;
• The full range of the fabrication process, from substrate, growth, and processing to electrical, optical, and defect characterization, as well as reliability and packaging;
• Device integration and novel device structures;
• Tutorials, reviews, and perspectives.

Dr. Carlo De Santi
Prof. Matteo Meneghini
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • wide-bandgap semiconductors
  • power electronics
  • RF electronics
  • optoelectronics
  • computer-assisted simulation

Published Papers (4 papers)

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Research

10 pages, 1720 KiB  
Article
Ground State Properties of the Wide Band Gap Semiconductor Beryllium Sulfide (BeS)
by Blaise A. Ayirizia, Janee’ S. Brumfield, Yuriy Malozovsky and Diola Bagayoko
Materials 2021, 14(20), 6128; https://0-doi-org.brum.beds.ac.uk/10.3390/ma14206128 - 15 Oct 2021
Cited by 2 | Viewed by 1369
Abstract
We report the results from self-consistent calculations of electronic, transport, and bulk properties of beryllium sulfide (BeS) in the zinc-blende phase, and employed an ab-initio local density approximation (LDA) potential and the linear combination of atomic orbitals (LCAO). We obtained the ground state [...] Read more.
We report the results from self-consistent calculations of electronic, transport, and bulk properties of beryllium sulfide (BeS) in the zinc-blende phase, and employed an ab-initio local density approximation (LDA) potential and the linear combination of atomic orbitals (LCAO). We obtained the ground state properties of zb-BeS with the Bagayoko, Zhao, and Williams (BZW) computational method, as enhanced by Ekuma and Franklin (BZW-EF). Our findings include the electronic energy bands, the total (DOS) and partial (pDOS) densities of states, electron and hole effective masses, the equilibrium lattice constant, and the bulk modulus. The calculated band structure clearly shows that zb-BeS has an indirect energy band gap of 5.436 eV, from Γ to a point between Γ and X, for an experimental lattice constant of 4.863 Å. This is in excellent agreement with the experiment, unlike the findings of more than 15 previous density functional theory (DFT) calculations that did not perform the generalized minimization of the energy functional, required by the second DFT theorem, which is inherent to the implementation of our BZW-EF method. Full article
(This article belongs to the Special Issue Wide-Bandgap Materials and Applications)
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12 pages, 2924 KiB  
Article
Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability
by Kalparupa Mukherjee, Carlo De Santi, Matteo Borga, Shuzhen You, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni and Matteo Meneghini
Materials 2020, 13(21), 4740; https://0-doi-org.brum.beds.ac.uk/10.3390/ma13214740 - 23 Oct 2020
Cited by 13 | Viewed by 2528
Abstract
We propose to use a bilayer insulator (2.5 nm Al2O3 + 35 nm SiO2) as an alternative to a conventional uni-layer Al2O3 (35 nm), for improving the performance and the reliability of GaN-on-Si semi vertical trench MOSFETs. [...] Read more.
We propose to use a bilayer insulator (2.5 nm Al2O3 + 35 nm SiO2) as an alternative to a conventional uni-layer Al2O3 (35 nm), for improving the performance and the reliability of GaN-on-Si semi vertical trench MOSFETs. This analysis has been performed on a test vehicle structure for module development, which has a limited OFF-state performance. We demonstrate that devices with the bilayer dielectric present superior reliability characteristics than those with the uni-layer, including: (i) gate leakage two-orders of magnitude lower; (ii) 11 V higher off-state drain breakdown voltage; and (iii) 18 V higher gate-source breakdown voltage. From Weibull slope extractions, the uni-layer shows an extrinsic failure, while the bilayer presents a wear-out mechanism. Extended reliability tests investigate the degradation process, and hot-spots are identified through electroluminescence microscopy. TCAD simulations, in good agreement with measurements, reflect electric field distribution near breakdown for gate and drain stresses, demonstrating a higher electric field during positive gate stress. Furthermore, DC capability of the bilayer and unilayer insulators are found to be comparable for same bias points. Finally, comparison of trapping processes through double pulsed and Vth transient methods confirms that the Vth shifts are similar, despite the additional interface present in the bilayer devices. Full article
(This article belongs to the Special Issue Wide-Bandgap Materials and Applications)
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9 pages, 3609 KiB  
Article
Comparative Research of GaN Growth Mechanisms on Patterned Sapphire Substrates with Sputtered AlON Nucleation Layers
by Yuan Gao, Shengrui Xu, Ruoshi Peng, Hongchang Tao, Jincheng Zhang and Yue Hao
Materials 2020, 13(18), 3933; https://0-doi-org.brum.beds.ac.uk/10.3390/ma13183933 - 05 Sep 2020
Cited by 3 | Viewed by 1934
Abstract
The utilization of sputtered AlN nucleation layers (NLs) and patterned sapphire substrates (PSSs) could greatly improve GaN crystal quality. However, the growth mechanism of GaN on PSSs with sputtered AlN NLs has not been thoroughly understood. In this paper, we deposited AlON by [...] Read more.
The utilization of sputtered AlN nucleation layers (NLs) and patterned sapphire substrates (PSSs) could greatly improve GaN crystal quality. However, the growth mechanism of GaN on PSSs with sputtered AlN NLs has not been thoroughly understood. In this paper, we deposited AlON by sputtering AlN with O2, and we found that the variation of thickness of sputtered AlON NLs greatly influenced GaN growth on PSSs. (1) For 10 nm thin AlON sputtering, no AlON was detected on the cone sidewalls. Still, GaN nucleated preferably in non-(0001) orientation on these sidewalls. (2) If the thickness of the sputtered AlON NL was 25 nm, AlON formed on the cone sidewalls and flat regions, and some small GaN crystals formed near the bottom of the cones. (3) If the sputtered AlON was 40 nm, the migration ability of Ga atoms would be enhanced, and GaN nucleated at the top of the cones, which have more chances to grow and generate more dislocations. Finally, the GaN growth mechanisms on PSSs with sputtered AlON NLs of different thicknesses were proposed. Full article
(This article belongs to the Special Issue Wide-Bandgap Materials and Applications)
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10 pages, 3810 KiB  
Article
Carbon-Based Band Gap Engineering in the h-BN Analytical Modeling
by Mohammad Taghi Ahmadi, Ahmad Razmdideh, Seyed Saeid Rahimian Koloor and Michal Petrů
Materials 2020, 13(5), 1026; https://0-doi-org.brum.beds.ac.uk/10.3390/ma13051026 - 25 Feb 2020
Cited by 2 | Viewed by 2296
Abstract
The absence of a band gap in graphene is a hindrance to its application in electronic devices. Alternately, the complete replacement of carbon atoms with B and N atoms in graphene structures led to the formation of hexagonal boron nitride (h-BN) and caused [...] Read more.
The absence of a band gap in graphene is a hindrance to its application in electronic devices. Alternately, the complete replacement of carbon atoms with B and N atoms in graphene structures led to the formation of hexagonal boron nitride (h-BN) and caused the opening of its gap. Now, an exciting possibility is a partial substitution of C atoms with B and N atoms in the graphene structure, which caused the formation of a boron nitride composite with specified stoichiometry. BC2N nanotubes are more stable than other triple compounds due to the existence of a maximum number of B–N and C–C bonds. This paper focused on the nearest neighbor’s tight-binding method to explore the dispersion relation of BC2N, which has no chemical bond between its carbon atoms. More specifically, the band dispersion of this specific structure and the effects of energy hopping in boron–carbon and nitrogen–carbon atoms on the band gap are studied. Besides, the band structure is achieved from density functional theory (DFT) using the generalized gradient approximations (GGA) approximation method. This calculation shows that this specific structure is semimetal, and the band gap energy is 0.167 ev. Full article
(This article belongs to the Special Issue Wide-Bandgap Materials and Applications)
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