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Advanced 2D Materials for New-Generation Electronic Devices

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: closed (20 July 2022) | Viewed by 10096

Special Issue Editor


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Guest Editor
Thales Research & Technology, 1 avenue Augustin Fresnel, 91767 Palaiseau, France
Interests: 2D materials; energy storage and conversion; carbon nanomaterials; topological insulators

Special Issue Information

Dear Colleagues,

Graphene and other two-dimensional (2D) materials have been one of the hottest research areas in the past decade. Giant projects, e.g., the EU Graphene Flagship led by Chalmers, have been launched. To date, 2D materials have been used to fabricate a new generation of devices with improved functionalities such as flexibility and “more-than-Moore” optics. However, the great potential of these materials lies in the capacity for conceiving and fabricating new building blocks that could change the paradigm of electronic devices, moving to the “beyond CMOS” realm—a new horizon where device labelling will change and where the building blocks of “electronics” (and optoelectronics) will be based on new concepts with improved performance and reduced energy consumption. We can mention new devices based on spintronics or also other, very interesting, new exotic materials such as 2D topological insulators that will lead the real revolution in 2D materials, exploiting their unique and intrinsic properties. It is my pleasure to invite all the main actors in the field of 2D materials to submit contributions that will help to identify the main trends for the future of disruptive technologies in the field of electronics, which will be published in the Special Issue. Full papers, communications and reviews on experimental and theoretical studies of atomically thin 2D materials in devices based on nanoelectronics, optoelectronics or spintronics are all welcome.

Dr. Bondavalli Paolo
Guest Editor

Manuscript Submission Information

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Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • 2D materials
  • Graphene
  • Topological insulators
  • Spintronics
  • Electronics/optoelectronics
  • Beyond CMOS
  • More-than-Moore

Published Papers (3 papers)

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Research

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15 pages, 3031 KiB  
Article
On the Localization of Persistent Currents Due to Trapped Magnetic Flux at the Stacking Faults of Graphite at Room Temperature
by Regina Ariskina, Markus Stiller, Christian E. Precker, Winfried Böhlmann and Pablo D. Esquinazi
Materials 2022, 15(10), 3422; https://0-doi-org.brum.beds.ac.uk/10.3390/ma15103422 - 10 May 2022
Cited by 9 | Viewed by 1507
Abstract
Granular superconductivity at high temperatures in graphite can emerge at certain two-dimensional (2D) stacking faults (SFs) between regions with twisted (around the c-axis) or untwisted crystalline regions with Bernal (ABA…) and/or rhombohedral (ABCABCA…) stacking order. One way to observe experimentally such 2D superconductivity [...] Read more.
Granular superconductivity at high temperatures in graphite can emerge at certain two-dimensional (2D) stacking faults (SFs) between regions with twisted (around the c-axis) or untwisted crystalline regions with Bernal (ABA…) and/or rhombohedral (ABCABCA…) stacking order. One way to observe experimentally such 2D superconductivity is to measure the frozen magnetic flux produced by a permanent current loop that remains after removing an external magnetic field applied normal to the SFs. Magnetic force microscopy was used to localize and characterize such a permanent current path found in one natural graphite sample out of ∼50 measured graphite samples of different origins. The position of the current path drifts with time and roughly follows a logarithmic time dependence similar to the one for flux creep in type II superconductors. We demonstrate that a ≃10 nm deep scratch on the sample surface at the position of the current path causes a change in its location. A further scratch was enough to irreversibly destroy the remanent state of the sample at room temperature. Our studies clarify some of the reasons for the difficulties of finding a trapped flux in a remanent state at room temperature in graphite samples with SFs. Full article
(This article belongs to the Special Issue Advanced 2D Materials for New-Generation Electronic Devices)
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10 pages, 3278 KiB  
Article
High-Selectivity Bandpass Filter with Controllable Attenuation Based on Graphene Nanoplates
by Jianzhong Chen, Jiali Zhang, Yutong Zhao, Liang Li, Tao Su, Chi Fan and Bian Wu
Materials 2022, 15(5), 1694; https://0-doi-org.brum.beds.ac.uk/10.3390/ma15051694 - 24 Feb 2022
Cited by 1 | Viewed by 1249
Abstract
A high-selectivity band pass filter with controllable attenuation based on graphene nanoplates is proposed in this paper. Graphene with controllable resistance has a good uniform attenuation effect to electric field intensity. The filter utilizes quarter wavelength stepped impedance resonators and mixed electromagnetic coupling [...] Read more.
A high-selectivity band pass filter with controllable attenuation based on graphene nanoplates is proposed in this paper. Graphene with controllable resistance has a good uniform attenuation effect to electric field intensity. The filter utilizes quarter wavelength stepped impedance resonators and mixed electromagnetic coupling to have compact circuits and high performance. The graphene nanoplates are loaded on the microstrip resonator to reduce the electric field intensity, which results in a flat attenuation in the passband. In addition, the filter has two transmission zeros, which lead to a strong selectivity. Finally, a high-selectivity bandpass filter with controllable attenuation is formed. By changing the bias voltage of graphene, a controllable attenuation of 1.64–11.13 dB can be achieved in the working passband centered at 1.36 GHz. In order to validate the concept, the prototype is fabricated and measured. The measurement results are in good agreement with the simulation results. The proposed high-selectivity bandpass filter with controllable attenuation based on graphene nanoplates has widely potential in reconfigurable wireless communication systems and radar systems due to its high integration and versatility. Full article
(This article belongs to the Special Issue Advanced 2D Materials for New-Generation Electronic Devices)
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Review

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22 pages, 10666 KiB  
Review
Estimation of Number of Graphene Layers Using Different Methods: A Focused Review
by Vineet Kumar, Anuj Kumar, Dong-Joo Lee and Sang-Shin Park
Materials 2021, 14(16), 4590; https://0-doi-org.brum.beds.ac.uk/10.3390/ma14164590 - 16 Aug 2021
Cited by 83 | Viewed by 6694
Abstract
Graphene, a two-dimensional nanosheet, is composed of carbon species (sp2 hybridized carbon atoms) and is the center of attention for researchers due to its extraordinary physicochemical (e.g., optical transparency, electrical, thermal conductivity, and mechanical) properties. Graphene can be synthesized using top-down or [...] Read more.
Graphene, a two-dimensional nanosheet, is composed of carbon species (sp2 hybridized carbon atoms) and is the center of attention for researchers due to its extraordinary physicochemical (e.g., optical transparency, electrical, thermal conductivity, and mechanical) properties. Graphene can be synthesized using top-down or bottom-up approaches and is used in the electronics and medical (e.g., drug delivery, tissue engineering, biosensors) fields as well as in photovoltaic systems. However, the mass production of graphene and the means of transferring monolayer graphene for commercial purposes are still under investigation. When graphene layers are stacked as flakes, they have substantial impacts on the properties of graphene-based materials, and the layering of graphene obtained using different approaches varies. The determination of number of graphene layers is very important since the properties exhibited by monolayer graphene decrease as the number of graphene layer per flake increases to 5 as few-layer graphene, 10 as multilayer graphene, and more than 10 layers, when it behaves like bulk graphite. Thus, this review summarizes graphene developments and production. In addition, the efficacies of determining the number of graphene layers using various characterization methods (e.g., transmission electron microscopy (TEM), atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectra and mapping, and spin hall effect-based methods) are compared. Among these methods, TEM and Raman spectra were found to be most promising to determine number of graphene layers and their stacking order. Full article
(This article belongs to the Special Issue Advanced 2D Materials for New-Generation Electronic Devices)
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