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Advances on Oxide Semiconductor Transistors and Related Materials

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: closed (31 March 2022) | Viewed by 5801

Special Issue Editor


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Guest Editor
CENIMAT/I3N, Departamento de Ciência dos Materiais (DCM), and CEMOP/UNINOVA, NOVA School of Science and Technology (FCT NOVA), Universidade NOVA de Lisboa, 2829-516 Caparica, Portugal
Interests: oxide transistors; flexible electronics; nanogenerators; oxide nanostructures; oxide thin films; nanolithography
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Special Issue Information

Dear Colleagues,

After a fast market adoption by the key players of the display industry, oxide thin-film transistors are now an established technology for display backplanes. While indium-gallium-zinc oxide (IGZO) is by far the most well-known oxide semiconductor bringing oxide thin-film transistors (TFTs) into reality, other possibilities have emerged, promising higher sustainability and/or enhanced performance. Researchers are also looking into ways of including the benefits of 1D and 2D oxide nanostructures in large-scale thin film electronics, as this would take performance and functionality to as-of-yet unexplored levels. Moreover, the crucial role of other materials assuring oxide transistor/circuit operation cannot be ignored: gate and interlevel insulators, (transparent) conductors, passivation and buffer layers, and ultimately the substrates where these devices are fabricated have all been advancing and still require research to turn oxide transistors into the platform of choice for the smart surfaces of the future.

In line with this, the present Special Issue welcomes submissions on a multiplicity of topics related to the latest advances in oxide transistor science and technology, including, but not limited to:

- n- and p-Type oxide semiconductors for transistors, including thin films as well as 1D and 2D nanostructures.

- Transparent conductors for oxide transistors (e.g., based on oxides, metal nanostructures/meshes, or hybrid approaches).

- Electrical insulators for oxide transistors, used as gate dielectrics, interlevel insulators, passivation, or others.

- Substrates for the fabrication or transfer of oxide transistors.

- Advances in vacuum-based and solution processing routes to fabricate the materials mentioned above.

- New or enhanced oxide transistor architectures.

- Charge transport, reliability and stability, including mechanical, electrical, optical, or other environmental stimuli.

- Material and device models.

- Applications of oxide transistors to electronic circuits, sensors, displays, or other fields.

Prof. Dr. Pedro Barquinha
Guest Editor

Manuscript Submission Information

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Keywords

  • oxide TFTs
  • oxide electronics
  • hybrid materials/devices
  • flexible electronics
  • oxide nanostructures

Published Papers (2 papers)

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Research

7 pages, 375 KiB  
Communication
Reversible Barrier Switching of ZnO/RuO2 Schottky Diodes
by Philipp Wendel, Dominik Dietz, Jonas Deuermeier and Andreas Klein
Materials 2021, 14(10), 2678; https://0-doi-org.brum.beds.ac.uk/10.3390/ma14102678 - 20 May 2021
Cited by 5 | Viewed by 2217
Abstract
The current-voltage characteristics of ZnO/RuO2 Schottky diodes prepared by magnetron sputtering are shown to exhibit a reversible hysteresis behavior, which corresponds to a variation of the Schottky barrier height between 0.9 and 1.3 eV upon voltage cycling. The changes in the barrier [...] Read more.
The current-voltage characteristics of ZnO/RuO2 Schottky diodes prepared by magnetron sputtering are shown to exhibit a reversible hysteresis behavior, which corresponds to a variation of the Schottky barrier height between 0.9 and 1.3 eV upon voltage cycling. The changes in the barrier height are attributed to trapping and de-trapping of electrons in oxygen vacancies. Full article
(This article belongs to the Special Issue Advances on Oxide Semiconductor Transistors and Related Materials)
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12 pages, 3346 KiB  
Article
Thermal Damage-Free Microwave Annealing with Efficient Energy Conversion for Fabricating of High-Performance a-IGZO Thin-Film Transistors on Flexible Substrates
by Ki-Woong Park and Won-Ju Cho
Materials 2021, 14(10), 2630; https://0-doi-org.brum.beds.ac.uk/10.3390/ma14102630 - 18 May 2021
Cited by 3 | Viewed by 2956
Abstract
In this study, we applied microwave annealing (MWA) to fabricate amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) without thermal damage to flexible polyimide (PI) substrates. Microwave energy is highly efficient for selective heating of materials when compared to conventional thermal annealing (CTA). We applied [...] Read more.
In this study, we applied microwave annealing (MWA) to fabricate amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) without thermal damage to flexible polyimide (PI) substrates. Microwave energy is highly efficient for selective heating of materials when compared to conventional thermal annealing (CTA). We applied MWA and CTA to a-IGZO TFTs on PI substrate to evaluate the thermal damage to the substrates. While the PI substrate did not suffer thermal damage even at a high power in MWA, it suffered severe damage at high temperatures in CTA. Moreover, a-IGZO TFTs were prepared by MWA at 600 W for 2 min, whereas the same process using CTA required 30 min at a temperature of 300 °C, which is a maximum process condition in CTA without thermal damage to the PI substrate. Hence, MWA TFTs have superior electrical performance when compared to CTA TFTs, because traps/defects are effectively eliminated. Through instability evaluation, it was found that MWA TFTs were more stable than CTA TFTs against gate bias stress at various temperatures. Moreover, an MWA TFT-constructed resistive load inverter exhibited better static and dynamic characteristics than the CTA TFT-constructed one. Therefore, MWA is a promising thermal process with efficient energy conversion that allows the fabrication of high-performance electronic devices. Full article
(This article belongs to the Special Issue Advances on Oxide Semiconductor Transistors and Related Materials)
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