Growth and Characterization in Nanowires

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Synthesis, Interfaces and Nanostructures".

Deadline for manuscript submissions: closed (31 July 2021) | Viewed by 30469

Special Issue Editor


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Guest Editor
Institute of Inorganic Chemistry, University of Goettingen, Tammannstrasse 4, 37077 Goettingen, Germany
Interests: energy storage devices; coatings; electrolytes; electrochemistry; polymers; nanomaterials

Special Issue Information

Dear Colleagues,

Nanowires, as an innovative one-dimensional (1D) nanostructure, have recently attracted great interest in a wide range of technological applications from photovoltaics, thermoelectrics, electronics, and optics to electrochemical energy storage and conversion devices due to their peculiar physical, morphological, mechanical. and structural properties. At present, a great variety of nanowire-based materials, such as polymers, oxides, nitrides, metals or semiconductors, among others, were achieved by means of numerous experimental procedures. In this direction, a large spectrum of synthesis techniques and theoretical models has allowed us to understand and unveil the enormous potential of nanowires in terms of their performances. However, in spite of the tremendous efforts conducted in the last decade in this domain, important technical challenges regarding the synthesis of novel materials and the comprehension of their performances are critical to accomplish the new perspectives of nanowires in the near future.

The aim of this Special Issue is to bring together the latest developments on experimental synthesis techniques and theoretical models in the area of nanowires, as well as their evaluation in important emergent research fields ranging from energy storage to optoelectronics. Consequently, all researchers are invited to contribute original research results in form of scientific papers, short communications or review-style articles concerning experimental, theoretical, and technological aspects and applications of nanowires.

Dr. David Aradilla
Guest Editor

Manuscript Submission Information

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Keywords

  • Electrochemical techniques
  • Modelling
  • In operando techniques
  • Microscopy
  • Spectroscopy
  • Electrochemical energy storage and conversion devices
  • Template-free synthesis
  • Semiconductor nanowires

Published Papers (7 papers)

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Research

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9 pages, 17213 KiB  
Article
Annealed ZnO/Al2O3 Core-Shell Nanowire as a Platform to Capture RNA in Blood Plasma
by Hiromi Takahashi, Takao Yasui, Annop Klamchuen, Narathon Khemasiri, Tuksadon Wuthikhun, Piyawan Paisrisarn, Keiko Shinjo, Yotaro Kitano, Kosuke Aoki, Atsushi Natsume, Sakon Rahong and Yoshinobu Baba
Nanomaterials 2021, 11(7), 1768; https://0-doi-org.brum.beds.ac.uk/10.3390/nano11071768 - 7 Jul 2021
Cited by 7 | Viewed by 5127
Abstract
RNA analytical platforms gained extensive attention recently for RNA-based molecular analysis. However, the major challenge for analyzing RNAs is their low concentration in blood plasma samples, hindering the use of RNAs for diagnostics. Platforms that can enrich RNAs are essential to enhance molecular [...] Read more.
RNA analytical platforms gained extensive attention recently for RNA-based molecular analysis. However, the major challenge for analyzing RNAs is their low concentration in blood plasma samples, hindering the use of RNAs for diagnostics. Platforms that can enrich RNAs are essential to enhance molecular detection. Here, we developed the annealed ZnO/Al2O3 core-shell nanowire device as a platform to capture RNAs. We showed that the annealed ZnO/Al2O3 core-shell nanowire could capture RNAs with high efficiency compared to that of other circulating nucleic acids, including genomic DNA (gDNA) and cell-free DNA (cfDNA). Moreover, the nanowire was considered to be biocompatible with blood plasma samples due to the crystalline structure of the Al2O3 shell which serves as a protective layer to prevent nanowire degradation. Our developed device has the potential to be a platform for RNA-based extraction and detection. Full article
(This article belongs to the Special Issue Growth and Characterization in Nanowires)
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11 pages, 4366 KiB  
Article
Modeling and Epitaxial Growth of Homogeneous Long-InGaN Nanowire Structures
by Sung-Un Kim and Yong-Ho Ra
Nanomaterials 2021, 11(1), 9; https://0-doi-org.brum.beds.ac.uk/10.3390/nano11010009 - 23 Dec 2020
Cited by 6 | Viewed by 2728
Abstract
One-dimensional nanowires based on Group III-nitride materials are emerging as one of the most promising structures for applications of light-emitting diodes (LEDs), laser diodes (LDs), solar cells, and photocatalysts. However, leading to the so-called “green gap” in photonics, the fabrication of high concentration [...] Read more.
One-dimensional nanowires based on Group III-nitride materials are emerging as one of the most promising structures for applications of light-emitting diodes (LEDs), laser diodes (LDs), solar cells, and photocatalysts. However, leading to the so-called “green gap” in photonics, the fabrication of high concentration indium gallium nitride (InGaN) and long-InGaN structures remains still challenging. In this study, we performed simulations for structural modeling of uniform temperature distribution in a nanowire epitaxy, and have successfully developed high-concentration InGaN and long-InGaN nanowire heterostructures on silicon (Si) substrate using molecular beam epitaxy (MBE) system. From scanning electron microscope (SEM) and transmission electron microscope (TEM) results, it was confirmed that the various doped-InGaN nanowire structures show much higher crystal quality compared to conventional nanowire structures. By introducing a new three-step modulated growth technique, the n-/p-InGaN active regions were greatly increased and the optical properties were also dramatically improved due to reduced phase separation. In addition, a multi-band p-InGaN/GaN heterostructure was successfully fabricated with the core–shell nanowire structures, which enable the emission of light in the entire visible spectral range, and protect the InGaN surface from surface recombination. This paper offers important insight into the design and epitaxial growth of InGaN nanowire heterostructures. Full article
(This article belongs to the Special Issue Growth and Characterization in Nanowires)
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7 pages, 2901 KiB  
Article
Template-Free and Surfactant-Free Synthesis of Selective Multi-Oxide-Coated Ag Nanowires Enabling Tunable Surface Plasmon Resonance
by Chi-Hang Tsai, Shih-Yun Chen, Alexandre Gloter and Jenn-Ming Song
Nanomaterials 2020, 10(10), 1949; https://0-doi-org.brum.beds.ac.uk/10.3390/nano10101949 - 30 Sep 2020
Viewed by 2144
Abstract
Without using templates, seeds and surfactants, this study successfully prepared multi-oxide-layer coated Ag nanowires that enable tunable surface plasmon resonance without size or shape changes. A spontaneously grown ultra-thin titania layer onto the Ag nanowire surface causes a shift in surface plasmon resonance [...] Read more.
Without using templates, seeds and surfactants, this study successfully prepared multi-oxide-layer coated Ag nanowires that enable tunable surface plasmon resonance without size or shape changes. A spontaneously grown ultra-thin titania layer onto the Ag nanowire surface causes a shift in surface plasmon resonance towards low energy (high wavelength) and also acts as a preferential site for the subsequent deposition of various oxides, e.g., TiO2 and CeO2. The difference in refractive indices results in further plasmonic resonance shifts. This verifies that the surface plasma resonance wavelength of one-dimensional nanostructures can be adjusted using refractive indices and shell oxide thickness design. Full article
(This article belongs to the Special Issue Growth and Characterization in Nanowires)
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14 pages, 4730 KiB  
Article
Development of Monolithically Grown Coaxial GaInN/GaN Multiple Quantum Shell Nanowires by MOCVD
by Kazuma Ito, Weifang Lu, Naoki Sone, Yoshiya Miyamoto, Renji Okuda, Motoaki Iwaya, Tetsuya Tekeuchi, Satoshi Kamiyama and Isamu Akasaki
Nanomaterials 2020, 10(7), 1354; https://0-doi-org.brum.beds.ac.uk/10.3390/nano10071354 - 10 Jul 2020
Cited by 15 | Viewed by 3053
Abstract
Broadened emission was demonstrated in coaxial GaInN/GaN multiple quantum shell (MQS) nanowires that were monolithically grown by metalorganic chemical vapor deposition. The non-polar GaInN/GaN structures were coaxially grown on n-core nanowires with combinations of three different diameters and pitches. To broaden the emission [...] Read more.
Broadened emission was demonstrated in coaxial GaInN/GaN multiple quantum shell (MQS) nanowires that were monolithically grown by metalorganic chemical vapor deposition. The non-polar GaInN/GaN structures were coaxially grown on n-core nanowires with combinations of three different diameters and pitches. To broaden the emission band in these three nanowire patterns, we varied the triethylgallium (TEG) flow rate and the growth temperature of the quantum barriers and wells, and investigated their effects on the In incorporation rate during MQS growth. At higher TEG flow rates, the growth rate of MQS and the In incorporation rate were promoted, resulting in slightly higher cathodoluminescence (CL) intensity. An enhancement up to 2–3 times of CL intensity was observed by escalating the growth temperature of the quantum barriers to 800 °C. Furthermore, decreasing the growth temperature of the quantum wells redshifted the peak wavelength without reducing the MQS quality. Under the modified growth sequence, monolithically grown nanowires with a broaden emission was achieved. Moreover, it verified that reducing the filling factor (pitch) can further promote the In incorporation probability on the nanowires. Compared with the conventional film-based quantum well LEDs, the demonstrated monolithic coaxial GaInN/GaN nanowires are promising candidates for phosphor-free white and micro light-emitting diodes (LEDs). Full article
(This article belongs to the Special Issue Growth and Characterization in Nanowires)
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15 pages, 4614 KiB  
Article
CPP-GMR Performance of Electrochemically Synthesized Co/Cu Multilayered Nanowire Arrays with Extremely Large Aspect Ratio
by Himeyo Kamimura, Masamitsu Hayashida and Takeshi Ohgai
Nanomaterials 2020, 10(1), 5; https://0-doi-org.brum.beds.ac.uk/10.3390/nano10010005 - 18 Dec 2019
Cited by 15 | Viewed by 3028
Abstract
Anodized aluminum oxide (AAO) films, which have numerous nanochannels ca. 75 nm in diameter, D and ca. 70 µm in length, L (ca. 933 in aspect ratio, L/D), were used as a template material for growing Co/Cu multilayered nanowire arrays. [...] Read more.
Anodized aluminum oxide (AAO) films, which have numerous nanochannels ca. 75 nm in diameter, D and ca. 70 µm in length, L (ca. 933 in aspect ratio, L/D), were used as a template material for growing Co/Cu multilayered nanowire arrays. The multilayered nanowires with alternating Cu layer and Co layers were synthesized by using an electrochemical pulsed-potential deposition technique. The thickness of the Cu layer was adjusted from ca. 2 to 4 nm while that of the Co layer was regulated from ca. 13 to 51 nm by controlling the pulsed potential parameters. To get a Co/Cu multilayered nanowire in an electrochemical in-situ contact with a sputter-deposited Au thin layer, the pulsed potential deposition was continued up to ca. 5000 cycles until the nanowire reached out toward the surface of AAO template. Current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) effect reached up to ca. 23.5% at room temperature in Co/Cu multilayered nanowires with ca. 3500 Co/Cu bilayers (Cu: 1.4 nm and Co: 18.8 nm). When decreasing the thickness of Co layer, the CPP-GMR value increased due to the Valet–Fert model in the long spin diffusion limit. Full article
(This article belongs to the Special Issue Growth and Characterization in Nanowires)
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12 pages, 2163 KiB  
Communication
Charge Storage Properties of Nanostructured Poly (3,4–ethylenedioxythiophene) Electrodes Revealed by Advanced Electrogravimetry
by Tao Lé, David Aradilla, Gérard Bidan, Florence Billon, Catherine Debiemme-Chouvy, Hubert Perrot and Ozlem Sel
Nanomaterials 2019, 9(7), 962; https://0-doi-org.brum.beds.ac.uk/10.3390/nano9070962 - 1 Jul 2019
Cited by 5 | Viewed by 3012
Abstract
PEDOT nanowires (NWs) directly grown on the conducting electrode of quartz resonators enable an advanced electrogravimetric analysis of their charge storage behavior. Electrochemical quartz crystal microbalance (EQCM) and its coupling with electrochemical impedance spectroscopy (ac–electrogravimetry or AC–EG) were used complementarily and [...] Read more.
PEDOT nanowires (NWs) directly grown on the conducting electrode of quartz resonators enable an advanced electrogravimetric analysis of their charge storage behavior. Electrochemical quartz crystal microbalance (EQCM) and its coupling with electrochemical impedance spectroscopy (ac–electrogravimetry or AC–EG) were used complementarily and reveal that TBA+, BF4 and ACN participate in the charge compensation process with different kinetics and quantity. BF4 anions were dominant in terms of concentration over TBA+ cations and the anion transfer results in the exclusion of the solvent molecules. TBA+ concentration variation in the electrode was small compared to that of the BF4 counterpart. However, Mw of TBA+ is much higher than BF4 (242.3 vs. 86.6 g·mol−1). Thus, TBA+ cations’ gravimetric contribution to the EQCM response was more significant than that of BF4. Additional contribution of ACN with an opposite flux direction compared with BF4, led to a net mass gain/lost during a negative/positive potential scan, masking partially the anion response. Such subtleties of the interfacial ion transfer processes were disentangled due to the complementarity of the EQCM and AC–EG methodologies, which were applied here for the characterization of electrochemical processes at the PEDOT NW electrode/organic electrolyte interface. Full article
(This article belongs to the Special Issue Growth and Characterization in Nanowires)
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Review

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23 pages, 4055 KiB  
Review
Photoluminescence of ZnO Nanowires: A Review
by Andres Galdámez-Martinez, Guillermo Santana, Frank Güell, Paulina R. Martínez-Alanis and Ateet Dutt
Nanomaterials 2020, 10(5), 857; https://0-doi-org.brum.beds.ac.uk/10.3390/nano10050857 - 29 Apr 2020
Cited by 258 | Viewed by 10462
Abstract
One-dimensional ZnO nanostructures (nanowires/nanorods) are attractive materials for applications such as gas sensors, biosensors, solar cells, and photocatalysts. This is due to the relatively easy production process of these kinds of nanostructures with excellent charge carrier transport properties and high crystalline quality. In [...] Read more.
One-dimensional ZnO nanostructures (nanowires/nanorods) are attractive materials for applications such as gas sensors, biosensors, solar cells, and photocatalysts. This is due to the relatively easy production process of these kinds of nanostructures with excellent charge carrier transport properties and high crystalline quality. In this work, we review the photoluminescence (PL) properties of single and collective ZnO nanowires and nanorods. As different growth techniques were obtained for the presented samples, a brief review of two popular growth methods, vapor-liquid-solid (VLS) and hydrothermal, is shown. Then, a discussion of the emission process and characteristics of the near-band edge excitonic emission (NBE) and deep-level emission (DLE) bands is presented. Their respective contribution to the total emission of the nanostructure is discussed using the spatial information distribution obtained by scanning transmission electron microscopy−cathodoluminescence (STEM-CL) measurements. Also, the influence of surface effects on the photoluminescence of ZnO nanowires, as well as the temperature dependence, is briefly discussed for both ultraviolet and visible emissions. Finally, we present a discussion of the size reduction effects of the two main photoluminescent bands of ZnO. For a wide emission (near ultra-violet and visible), which has sometimes been attributed to different origins, we present a summary of the different native point defects or trap centers in ZnO as a cause for the different deep-level emission bands. Full article
(This article belongs to the Special Issue Growth and Characterization in Nanowires)
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