Advances in Silicon Carbide Nanomaterials

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: closed (1 May 2022) | Viewed by 2509

Special Issue Editors


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Guest Editor
Institute of Materials for Electronics and Magnetism, Italian National Research Council, 7 - 00185 Rome, Italy
Interests: silicon carbide; molybdenum disulfide; nanowires; biomedical applications

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Guest Editor
Institute for Microelectronics and Microsystems, Catania, Catania, Italy
Interests: silicon; silicon carbide materials; wet etching; dry etching; solid liquid characterization; cycle voltammetry; NEMS; MEMS

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Guest Editor
Department of Electrical Engineering, University of South Florida, 4202 East Fowler Avenue, Tampa, FL 33620, USA
Interests: silicon carbide; biosensors; neural interfaces; nanostructures

Special Issue Information

Dear Colleagues,

Bulk silicon carbide is a wide-bandgap semiconductor with different crystalline forms. In the past, owing to its excellent electronic characteristics, it has mainly been used for high-temperature, high-frequency, and high-power electronic devices. SiC has also long been recognized as one of the best biocompatible materials, especially in cardiovascular and blood-contacting implants and other biomedical devices. Studies on silicon carbide and SiC-derived nanostructures appeared in the early 1990s along with the successful heteroepitaxial growth of SiC on silicon. An extensive literature review of silicon carbide-based nanostructures clearly shows that fundamental research in SiC nanostructures (nanoparticles, nanowires and nanodots) has shifted to numerous applied fields and continues to be a subject of increasing interest, especially in biosensing.

This is a sign that the structures and technologies have been mastered and that the most obvious applications (electronic devices) have been explored. Research teams are now exploring new fields and applications for these nanostructures. The purpose of this Special Issue is to bring together the state of the art in this field and to allow the emergence of novel ideas and concepts for silicon carbide- and SiC-derived nanostructured devices. Indeed, SiC-based nanostructures open up new perspectives for many interdisciplinary applications in the fields of biomarkers, energy recovery, photovoltaics, sensors, manipulators, actuators, optoelectronics, quantum devices, telecommunications, environmental science, mechanics, biomaterials, etc.

Since the synthesis of functional materials requires a good understanding of physical, biological and chemical properties, fundamental studies, as well as applied, theoretical and/ or computational studies, specifically related to new applications are encouraged.

Full papers, communications and reviews are all welcome.

Dr. Giancarlo Salviati
Dr. Giuseppe D'Arrigo
Dr. Stephen E. Saddow
Guest Editors

Manuscript Submission Information

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • silicon carbide
  • silicon carbide-based nanostructures
  • nanostructure doping
  • surface effects
  • surface functionalization
  • characterization of SiC nanostructures
  • applications of SiC nanostructures
  • theory and computation

Published Papers (1 paper)

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Research

9 pages, 2614 KiB  
Article
Bright Silicon Carbide Single-Photon Emitting Diodes at Low Temperatures: Toward Quantum Photonics Applications
by Igor A. Khramtsov and Dmitry Yu. Fedyanin
Nanomaterials 2021, 11(12), 3177; https://0-doi-org.brum.beds.ac.uk/10.3390/nano11123177 - 24 Nov 2021
Viewed by 1771
Abstract
Color centers in silicon carbide have recently emerged as one of the most promising emitters for bright single-photon emitting diodes (SPEDs). It has been shown that, at room temperature, they can emit more than 109 photons per second under electrical excitation. However, [...] Read more.
Color centers in silicon carbide have recently emerged as one of the most promising emitters for bright single-photon emitting diodes (SPEDs). It has been shown that, at room temperature, they can emit more than 109 photons per second under electrical excitation. However, the spectral emission properties of color centers in SiC at room temperature are far from ideal. The spectral properties could be significantly improved by decreasing the operating temperature. However, the densities of free charge carriers in SiC rapidly decrease as temperature decreases, which reduces the efficiency of electrical excitation of color centers by many orders of magnitude. Here, we study for the first time the temperature characteristics of SPEDs based on color centers in 4H-SiC. Using a rigorous numerical approach, we demonstrate that although the single-photon electroluminescence rate does rapidly decrease as temperature decreases, it is possible to increase the SPED brightness to 107 photons/s at 100 K using the recently predicted effect of hole superinjection in homojunction p-i-n diodes. This gives the possibility to achieve high brightness and good spectral properties at the same time, which paves the way toward novel quantum photonics applications of electrically driven color centers in silicon carbide. Full article
(This article belongs to the Special Issue Advances in Silicon Carbide Nanomaterials)
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