Strain in III–V Materials and Devices: Methods for Estimation and Effects

A special issue of Optics (ISSN 2673-3269). This special issue belongs to the section "Engineering Optics".

Deadline for manuscript submissions: closed (31 December 2023) | Viewed by 873

Special Issue Editor


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Guest Editor
Department of Engineering Physics, McMaster University, Hamilton, ON, Canada
Interests: III-V semiconductor lasers physics and applications: spectral properties and control; short-external-cavities; DFB; trace gas detection; estimation of strain by analysis of degree of polarization of luminescence; reliability

Special Issue Information

Dear Colleagues,

Mechanical strain affects the operation of III–V devices, including lasers and photonic-integrated circuits (PICs), through primarily the photoelastic effect and reliability issues. Thus methods to measure or estimate strain are of importance to provide input for the understanding and optimization of the operation of III–V devices. 

Multiple optical methods to estimate strain in materials exist, including but not limited to the analysis of spectral or polarization resolved measurement of cathodoluminescence, electroluminescence, and photoluminescence; Raman; birefringence; x-ray; and synchrotron. 

The goal of this Special Issue is to collect articles on methods for the estimation of strain in III–V materials and devices, and on the effects of strain on these materials and devices. The intent is to provide, in one issue, information on the performance and limitations of the various methods to estimate strain, to demonstrate the measurement techniques, and to illustrate the effects of strain on III–V devices and materials. Hopefully, this Special Issue will provide a convenient repository from which researchers can evaluate techniques and discover the latest effects of strain on III–V materials and devices. 

Articles on a measurement technique are expected to discuss and demonstrate the limiting performance such as spatial resolution and minimum measurable strain of the technique, and to discuss the advantages and disadvantages of the technique.

Submissions that discuss and demonstrate new methods for the estimation or measurement of strain are encouraged. These new methods could include machine-assisted learning or finite element method (FEM) simulations coupled with optical measurements of some type.  

In addition, submissions that report original measurements of the effects on strain on III–V devices are encouraged. The strain in these original measurements could be caused by die attach, wafter bonding, diffusion, dielectrics, metallization, geometry, or any of the many fabrication steps required to make a device.

Prof. Dr. Daniel T. Cassidy
Guest Editor

Manuscript Submission Information

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Keywords

  • strain
  • III–V materials and devices
  • effects of strain
  • optical methods
  • measurement technique
  • optical measurements

Published Papers (1 paper)

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Research

33 pages, 3133 KiB  
Article
Degree of Polarization of Cathodoluminescence from a (100) GaAs Substrate with SiN Stripes
by Daniel T. Cassidy, Philippe Pagnod-Rossiaux and Merwan Mokhtari
Optics 2024, 5(1), 11-43; https://0-doi-org.brum.beds.ac.uk/10.3390/opt5010002 - 17 Jan 2024
Viewed by 606
Abstract
Notes on fits of analytic estimations, 2D finite element method (FEM), and 3D FEM simulations to measurements of the cathodoluminescence (CL) and to the degree of polarization (DOP) of the CL from the top surface of a (100) GaAs substrate with [...] Read more.
Notes on fits of analytic estimations, 2D finite element method (FEM), and 3D FEM simulations to measurements of the cathodoluminescence (CL) and to the degree of polarization (DOP) of the CL from the top surface of a (100) GaAs substrate with a 6.22 μm wide SiN stripe are presented. Three interesting features are found in the DOP of CL data. Presumably these features are noticeable owing to the spatial resolution of the CL measurement system. Comparisons of both strain and spatial resolutions obtained by CL and photoluminescence (PL) systems are presented. The width of the central feature in the measured DOP is less than the width of the SiN, as measured from the CL. This suggests horizontal cracks or de-laminations into each side of the SiN of about 0.7 μm. In addition, it appears that deformed regions of widths of ≈1.5 μm and adjacent to the SiN must exist to explain some of the features. Full article
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