Optical and Optoelectronic Materials and Applications

A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Materials Science and Engineering".

Deadline for manuscript submissions: closed (31 May 2020) | Viewed by 10663

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Guest Editor
School of Natural (SNS), Massey University Albany, Auckland 0632, New Zealand
Interests: thin films; photoconductive detectors; scintillators; optical materials; vacuum ultraviolet laser materials; ultraviolet laser and amplifier systems; spectroscopy of rare earth-doped crystals and glasses
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Special Issue Information

Dear Colleagues,

Optical and optoelectronic materials play a crucial role in current and future technologies. New developments and breakthroughs in the growth, fabrication, and synthesis of these materials coupled with the characterization of their optical and electronic properties are important for the advancement of a wide range of applications. This Special Issue aims to publish new experimental and theoretical results as well as concise reviews relating to the broad field of optical and optoelectronic materials. The topics are not limited strictly to fundamental research. We also strongly encourage the submission of manuscripts focusing on the practical applications of optical and optoelectronic materials, including but not limited to lasers, optical sensors, scintillators, photovoltaics, light emitting devices, and phosphors.

Dr. Marilou Cadatal-Raduban
Guest Editor

Manuscript Submission Information

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Keywords

  • Crystal growth technologies (bulks, fibres)
  • Fabrication and characterization of transparent ceramics and glasses
  • Synthesis and optical properties of nano and microcrystals
  • Thin films for optical applications
  • Spectroscopy of luminescent materials
  • Persistent luminescent materials
  • Laser materials and laser systems
  • Scintillator materials and mechanisms
  • Light-emitting devices and phosphors
  • Optical sensors
  • Piezoelectric crystals and components design
  • Nonlinear optical materials
  • Magneto-optic materials
  • Modelling and computational methods in luminescent materials

Published Papers (4 papers)

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Research

11 pages, 8508 KiB  
Article
A Study on Optical Properties of Zinc Silicate Glass-Ceramics as a Host for Green Phosphor
by Siti Aisyah Abdul Wahab, Khamirul Amin Matori, Mohd Hafiz Mohd Zaid, Mohd Mustafa Awang Kechik, Sidek Hj Ab Aziz, Rosnita A. Talib, Aisyah Zakiah Khirel Azman, Rahayu Emilia Mohamed Khaidir, Mohammad Zulhasif Ahmad Khiri and Nuraidayani Effendy
Appl. Sci. 2020, 10(14), 4938; https://0-doi-org.brum.beds.ac.uk/10.3390/app10144938 - 18 Jul 2020
Cited by 13 | Viewed by 2628
Abstract
For the very first time, a study on the crystallization growth of zinc silicate glass and glass-ceramics was done, in which white rice husk ash (WRHA) was used as the silicon source. In this study, zinc silicate glass was fabricated by using melt–quenching [...] Read more.
For the very first time, a study on the crystallization growth of zinc silicate glass and glass-ceramics was done, in which white rice husk ash (WRHA) was used as the silicon source. In this study, zinc silicate glass was fabricated by using melt–quenching methods based on the composition (ZnO)0.55(WRHA)0.45, where zinc oxide (ZnO) and white rice husk ash were used as the raw materials. The control crystallization technique was used in which the sample was sintered at 700–950 °C; then, the physical, structural, and optical properties of the glass and glass-ceramics were investigated by using a densitometer, linear shrinkage, X-ray diffraction (XRD), Fourier transform infrared radiation (FTIR), field-emission scanning electron microscopy (FESEM), and photoluminescence spectroscopy (PL). The density and linear shrinkage increased as the crystallinity increased and the XRD results showed the progression of the crystal formation, in which the sample was still in an amorphous state at 27 °C and 700 °C; the crystalline phase started at 750 °C. Based on the FTIR spectra, all samples showed sharpened absorption bands as the sintering temperature was increased, and the FESEM image showed the progression of crystal growth, indicating the formation of zinc silicate glass-ceramics. Lastly, the PL spectra emitted three emission peaks, at 529, 570, and 682 nm for the green, yellow, and red emission, respectively. Full article
(This article belongs to the Special Issue Optical and Optoelectronic Materials and Applications)
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9 pages, 2373 KiB  
Article
Gold/QDs-Embedded-Ceria Nanoparticles: Optical Fluorescence Enhancement as a Quenching Sensor
by Nader Shehata, Effat Samir and Ishac Kandas
Appl. Sci. 2020, 10(4), 1236; https://0-doi-org.brum.beds.ac.uk/10.3390/app10041236 - 12 Feb 2020
Cited by 6 | Viewed by 2394
Abstract
This work focuses on improving the fluorescence intensity of cerium oxide (ceria) nanoparticles (NPs) through added plasmonic nanostructures. Ceria nanoparticles are fluorescent nanostructures which can emit visible fluorescence emissions under violet excitation. Here, we investigated different added plasmonic nanostructures, such as gold nanoparticles [...] Read more.
This work focuses on improving the fluorescence intensity of cerium oxide (ceria) nanoparticles (NPs) through added plasmonic nanostructures. Ceria nanoparticles are fluorescent nanostructures which can emit visible fluorescence emissions under violet excitation. Here, we investigated different added plasmonic nanostructures, such as gold nanoparticles (Au NPs) and Cadmium sulfide/selenide quantum dots (CdS/CdSe QDs), to check the enhancement of fluorescence intensity emissions caused by ceria NPs. Different plasmonic resonances of both aforementioned nanostructures have been selected to develop optical coupling with both fluorescence excitation and emission wavelengths of ceria. In addition, different additions whether in-situ or post-synthesis have been investigated. We found that in-situ Au NPs of a 530 nm plasmonic resonance wavelength provides the highest fluorescence emissions of ceria NPs compared to other embedded plasmonic structures. In addition to the optical coupling between plasmonic resonance of Au with the visible emissions fluorescence spectrum of ceria nanoparticles, the 530 nm in-situ Au NPs were found to reduce the bandgap of ceria NPs. We suggest that the formation of more tri-valent cerium ions traps energy levels along with more associated oxygen vacancies, which is responsible for increasing the fluorescence visible emissions intensity caused by ceria. As an application, the gold-ceria NPs is shown to optically detect the varied concentration of iron tiny particles in aqueous medium based on a fluorescence quenching mechanism. This work is promising in different applications such as biomarkers, cancer treatments, and environmental pollution monitoring. Full article
(This article belongs to the Special Issue Optical and Optoelectronic Materials and Applications)
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9 pages, 2313 KiB  
Article
Multi-Energy Valley Scattering Characteristics for a SI-GaAs-Based Terahertz Photoconductive Antenna in Linear Mode
by Chengang Dong, Wei Shi, Fei Xue and Yuhua Hang
Appl. Sci. 2020, 10(1), 7; https://0-doi-org.brum.beds.ac.uk/10.3390/app10010007 - 18 Dec 2019
Cited by 3 | Viewed by 1979
Abstract
In this paper, the relationship between the terahertz radiation and the spatial distribution of photogenerated carriers under different bias electric field is studied. Terahertz pulses and the photocurrent of SI-GaAs photoconductive antenna are measured by the terahertz time-domain spectroscopy system. The occupancy rate [...] Read more.
In this paper, the relationship between the terahertz radiation and the spatial distribution of photogenerated carriers under different bias electric field is studied. Terahertz pulses and the photocurrent of SI-GaAs photoconductive antenna are measured by the terahertz time-domain spectroscopy system. The occupancy rate for photogenerated carriers for different energy valleys is obtained by comparing the photocurrent of terahertz field integrating with respect to time with the photocurrent measured by oscilloscope. Results indicate that 93.04% of all photogenerated carriers are located in the Γ valley when the bias electric field is 3.33 kV/cm, and 68.6% of all photogenerated carriers are transferred to the satellite valley when the bias electric field is 20.00 kV/cm. With the bias electric field increasing, the carrier occupancy rate for the satellite valley tends to saturate at 72.16%. In order to obtain the carrier occupancy rate for the satellite valley and saturate value at the high bias electric field, an ensemble Monte Carlo simulation based on the theory of photo-activated charge domain is developed. Full article
(This article belongs to the Special Issue Optical and Optoelectronic Materials and Applications)
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12 pages, 3683 KiB  
Article
Comparative Study of ZnO Thin Films Grown on Quartz Glass and Sapphire (001) Substrates by Means of Magnetron Sputtering and High-Temperature Annealing
by Weijia Yang, Fengming Wang, Zeyi Guan, Pengyu He, Zhihao Liu, Linshun Hu, Mei Chen, Chi Zhang, Xin He and Yuechun Fu
Appl. Sci. 2019, 9(21), 4509; https://0-doi-org.brum.beds.ac.uk/10.3390/app9214509 - 24 Oct 2019
Cited by 11 | Viewed by 3328
Abstract
In this work, we reported a comparative study of ZnO thin films grown on quartz glass and sapphire (001) substrates through magnetron sputtering and high-temperature annealing. Firstly, the ZnO thin films were deposited on the quartz glass and sapphire (001) substrates in the [...] Read more.
In this work, we reported a comparative study of ZnO thin films grown on quartz glass and sapphire (001) substrates through magnetron sputtering and high-temperature annealing. Firstly, the ZnO thin films were deposited on the quartz glass and sapphire (001) substrates in the same conditions by magnetron sputtering. Afterwards, the sputtered ZnO thin films underwent an annealing process at 600 °C for 1 h in an air atmosphere to improve the quality of the films. X-ray diffraction, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectra, photoluminescence spectra, and Raman spectra were used to investigate the structural, morphological, electrical, and optical properties of the both as-received ZnO thin films. The ZnO thin films grown on the quartz glass substrates possess a full width of half maximum value of 0.271° for the (002) plane, a surface root mean square value of 0.50 nm and O vacancies/defects of 4.40% in the total XPS O 1s peak. The comparative investigation reveals that the whole properties of the ZnO thin films grown on the quartz glass substrates are comparable to those grown on the sapphire (001) substrates. Consequently, ZnO thin films with high quality grown on the quartz glass substrates can be achieved by means of magnetron sputtering and high-temperature annealing at 600 °C. Full article
(This article belongs to the Special Issue Optical and Optoelectronic Materials and Applications)
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