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Electronics
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Advanced Electronic Packaging Technology
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Advanced Electronic Packaging Technology

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Semiconductor Devices".

Deadline for manuscript submissions: 30 June 2024 | Viewed by 12138

Special Issue Editor

Prof. Dr. Daquan Yu

E-Mail Website
Guest Editor
School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, China
Interests: advanced packaging; integrated passive device; microsystem integration

Special Issue Information

Dear Colleagues, 

As Moore’s Law is reaching its limitation, the development of advanced packaging is moving towards advanced system integration in order to achieve more function, lower cost and smaller form factor. Advanced packaging brings the heterogeneous integration of various front-end technology nodes and higher levels of customization down both the scaling and functional roadmap. Recently, new technologies, such as TSV (Though Silicon Via), Wafer-level Fan-out (WL-FO) and 3D IC stacking, are fast growing and play important roles in the applications of advanced system integration.

In this Special Issue, the recent progress on advanced packaging technologies will be presented including WLP, 3D IC, 2.5D Interposer, TSV, TGV, Fan-Out, Flip-Chip, 3D WLCSP, Hybrid bonding, Panel-level packaging, etc.

Prof. Dr. Daquan Yu
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • WLP
  • 3D IC
  • 2.5D interposer
  • TSV
  • TGV
  • fan-out
  • flip-chip
  • 3D WLCSP
  • hybrid bonding
  • panel-level packaging

Published Papers (3 papers)

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Research

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15 pages, 4114 KiB  
Article
Synthesized Improvement of Die Fly and Die Shift Concerning the Wafer Molding Process for Ultrafine SAW Filter FOWLP
by Wei Li and Daquan Yu
Electronics 2023, 12(9), 2073; https://0-doi-org.brum.beds.ac.uk/10.3390/electronics12092073 - 30 Apr 2023
Viewed by 1439
Abstract
As the surface acoustic wave (SAW) filters incline to ultrafine, the failures resulting from the wafer molding process have become increasingly prominent. A methodology for coupling the mechanisms of die fly and die shift for the SAW filter miniatured with 737 μm [...] Read more.
As the surface acoustic wave (SAW) filters incline to ultrafine, the failures resulting from the wafer molding process have become increasingly prominent. A methodology for coupling the mechanisms of die fly and die shift for the SAW filter miniatured with 737 μm × 517 μm × 200 μm is developed for the trade-off between reliability and yields. In terms of die fly and die shift, the former occurs before the epoxy molding compound (EMC) is cured in the temperature rise period, while the latter occurs in the cooling stage after being cured. The die fly is induced by the fluid flow force in the high-temperature stage of heat compression, which is fatal for the scrap. Followed by the cooling stage, the CTE (coefficient of thermal expansion) misalignment between the die and epoxy molding compound (EMC) seriously affects the die shift and the following lithography process yields. The debonding critical energy in the mixed mode is employed to avert the die fly. Then, the die fly can be shunned by fine-tuning the die thickness, die layout, and EMC layout. A methodology to measure die shift was conducted, by which a total of 47,568 dies were embedded using compression molding. The mechanical error of the mounter and the die shift law are comprehensively leveraged, indicating that the die shift can be controlled within 50 μm for 8-inch wafer-level packaging. Full article
(This article belongs to the Special Issue Advanced Electronic Packaging Technology)
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11 pages, 4457 KiB  
Article
Characterization of Sn-xIn Solders and Thermomigration-Induced Interfacial IMC Growth of Cu/Sn-xIn/Cu Micro Solder Joints
by Yanfeng Du, Yuanyuan Qiao, Xiaolei Ren, Yanqing Lai and Ning Zhao
Electronics 2023, 12(8), 1899; https://0-doi-org.brum.beds.ac.uk/10.3390/electronics12081899 - 18 Apr 2023
Cited by 2 | Viewed by 1118
Abstract
The melting behavior and microstructure of bulk Sn-xIn (x = 6, 12 and 24, wt.%) solders and the thermomigration, elemental distribution and intermetallic compound (IMC) growth in Cu/Sn-xIn/Cu micro solder joints during soldering and aging under temperature gradient (TG) were investigated. The results [...] Read more.
The melting behavior and microstructure of bulk Sn-xIn (x = 6, 12 and 24, wt.%) solders and the thermomigration, elemental distribution and intermetallic compound (IMC) growth in Cu/Sn-xIn/Cu micro solder joints during soldering and aging under temperature gradient (TG) were investigated. The results indicate that In addition effectively decreased the melting temperature of the bulk solders. Only the InSn4 phase was detected when In addition was increased to 24 wt.%. During soldering under TG, the growth rate of the interfacial IMC layer at the cold end interfaces gradually decreased as the In content increased. The mechanism of microstructure evolution and elemental distribution in the micro solder joints was revealed based on the TG-induced atomic thermomigration (TM). The chemical potential gradient of atoms was enhanced by TM, and the rapid diffusion of atoms in the liquids resulted in a uniform distribution of In element in both solders and the IMC phase during soldering. While during aging under TG, there was a smaller chemical potential gradient due to the slow atomic diffusion rate. At this time, TG dominated the atomic migration, which resulted in a nonuniform distribution of the In element in the whole joints. This study provides further insight into the application of In-containing solders in electronic packaging. Full article
(This article belongs to the Special Issue Advanced Electronic Packaging Technology)
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Review

Jump to: Research

20 pages, 2434 KiB  
Review
Temporary Bonding and Debonding in Advanced Packaging: Recent Progress and Applications
by Zihao Mo, Fangcheng Wang, Jinhui Li, Qiang Liu, Guoping Zhang, Weimin Li, Chunlei Yang and Rong Sun
Electronics 2023, 12(7), 1666; https://0-doi-org.brum.beds.ac.uk/10.3390/electronics12071666 - 31 Mar 2023
Cited by 8 | Viewed by 8900
Abstract
Temporary bonding/debonding (TBDB) technologies have greatly contributed to the reliable fabrication of thin devices. However, the rapid development of large-scale, high-precision and ultra-thin devices in the semiconductor field has also proposed more stringent requirements for TBDB technologies. Here, we deliberate the recent progress [...] Read more.
Temporary bonding/debonding (TBDB) technologies have greatly contributed to the reliable fabrication of thin devices. However, the rapid development of large-scale, high-precision and ultra-thin devices in the semiconductor field has also proposed more stringent requirements for TBDB technologies. Here, we deliberate the recent progress of materials for temporary bonding and different debonding technologies over the past decade. Several common debonding methods are described, including thermal slide, wet chemical dissolution, mechanical peeling and laser ablation. We review the current status of different debonding technologies and highlight the applications of TBDB technologies in advanced electronic packaging. Possible solutions are proposed for the challenges and opportunities faced by different TBDB technologies. Ultimately, we attempt to propose an outlook on their future development and more possible applications. We believe that the simple schematics and refined data presented in this review would give readers a deep understanding of TBDB technologies and their vast application scenarios in future advanced electronic packaging. Full article
(This article belongs to the Special Issue Advanced Electronic Packaging Technology)
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