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Electronics
Special Issues
Recent Advances in Wide Bandgap Semiconductors
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Recent Advances in Wide Bandgap Semiconductors

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Semiconductor Devices".

Deadline for manuscript submissions: 31 May 2024 | Viewed by 3201

Special Issue Editors

Dr. Zhihua Dong

E-Mail Website
Guest Editor
School of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China
Interests: thin films and nanotechnology; optoelectronics; wide-bandgap semiconductors; HEMTs; novel devices
Dr. Kai Fu

E-Mail Website
Guest Editor
Department of Electrical and Computer Engineering, The University of Utah, Salt Lake City, UT 84112, USA
Interests: GaN; power electronics
Special Issues, Collections and Topics in MDPI journals
Dr. Dawei Yan

E-Mail Website
Guest Editor
Engineering Research Center of IoT Technology Applications, Jiangnan University, Wuxi 214122, China
Interests: reliability and failure analysis of power and IC chips; design of power electronics and application modules; development of hardware systems and software for electrical and photoelectric detection equipment

Special Issue Information

Dear Colleagues,

This Special Issue is devoted to publishing new progress and trends in the wide-bandgap (WBG) semiconductor area, including materials growth, electronics devices, optoelectronic devices, circuits based on GaN, SiC, Ga2O3, BN, AlN, Diamond, etc., and novel design/processing and reliability issues around WBG semiconductors.

In this Special Issue, we encourage scholars involved in WBG semiconductors to discuss key topics in the field and submit original articles as well as review articles to this Special Issue. We expect these papers to be widely read and highly influential within the field.

The subject areas include but are not limited to the following:

  • Material growth, including GaN, AlN, SiC, Ga2O3, Diamond, etc.;
  • Transistors based on WBG semiconductors;
  • UV detectors based on WBG semiconductors;
  • LED/LD based on WBG semiconductors;
  • Novel devices based on WBG semiconductors;
  • New processing/technique/design for WBG semiconductors;
  • Power electronics circuits based on WBG semiconductors;
  • Power amplifiers based on WBG semiconductors;
  • MMIC;
  • Other electronic or optoelectronic devices based on WBG semiconductors;
  • Reliability;
  • Novel applications for WBG semiconductors;
  • Interdisciplinary research for WBG semiconductors, such as transparent electronics and flexible electronics.

Dr. Zhihua Dong
Dr. Kai Fu
Dr. Dawei Yan
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • wide-bandgap semiconductors
  • GaN
  • SiC
  • Ga2O3
  • AlN
  • diamond
  • electronic devices
  • optoelectronic devices
  • power amplifier
  • MMIC

Published Papers (3 papers)

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Research

11 pages, 4882 KiB  
Article
Modulation of Diamond PN Junction Diode with Double-Layered n-Type Diamond by Using TCAD Simulation
by Caoyuan Mu, Genzhuang Li, Xianyi Lv, Qiliang Wang, Hongdong Li, Liuan Li and Guangtian Zou
Electronics 2024, 13(9), 1703; https://0-doi-org.brum.beds.ac.uk/10.3390/electronics13091703 - 28 Apr 2024
Viewed by 214
Abstract
This study proposed a novel double-layer junction termination structure for vertical diamond-based PN junction diodes (PND). The effects of the geometry and doping concentration of the junction termination structure on the PNDs’ electrical properties are investigated using Silvaco TCAD software (Version 5.0.10.R). It [...] Read more.
This study proposed a novel double-layer junction termination structure for vertical diamond-based PN junction diodes (PND). The effects of the geometry and doping concentration of the junction termination structure on the PNDs’ electrical properties are investigated using Silvaco TCAD software (Version 5.0.10.R). It demonstrates that the electric performances of PND with a single n-type diamond layer are sensitive to the doping concentration and electrode location of the n-type diamond. To further suppress the electric field crowding and obtain a better balance between breakdown voltage and on-resistance, a double-layer junction termination structure is introduced and evaluated, yielding significantly improved electronic performances. Those results provide some useful thoughts for the design of vertical diamond PND devices. Full article
(This article belongs to the Special Issue Recent Advances in Wide Bandgap Semiconductors)
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8 pages, 1868 KiB  
Communication
Current Drops in CF4 Plasma-Treated AlGaN/GaN Heterojunction in Polar Gas Ambient
by Ying Ma, Liang Chen, Zhihua Dong, Yifang Hong, Yang Xiao, Yijie Xin, Bin Zhang, Hua Qin, Ting Zhang, Xiaodong Zhang, Guohao Yu, Zhiqun Cheng, Lingfeng Mao and Yong Cai
Electronics 2023, 12(8), 1809; https://0-doi-org.brum.beds.ac.uk/10.3390/electronics12081809 - 11 Apr 2023
Viewed by 1127
Abstract
This letter reports the phenomenon of current drops in an AlGaN/GaN heterojunction with CF4 plasma treated in a polar gas ambient. Ungated AlGaN/GaN HEMT with CF4 plasma treatment was tested in ethanol, acetonitrile, and an acetic acid gas ambient, and the [...] Read more.
This letter reports the phenomenon of current drops in an AlGaN/GaN heterojunction with CF4 plasma treated in a polar gas ambient. Ungated AlGaN/GaN HEMT with CF4 plasma treatment was tested in ethanol, acetonitrile, and an acetic acid gas ambient, and the current dropped by 52%, 51% and 61%, respectively, which are much higher than the drops (6%, 7%, and 8%) in normal ungated HEMT. On the one hand, based on “ambient doping”, a possible model was proposed to explain this phenomenon. On the other hand, the lower initial current was very important to increase the sensitivity. This means that the initial current should be elaborately designed to achieve maximum sensitivity. Full article
(This article belongs to the Special Issue Recent Advances in Wide Bandgap Semiconductors)
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12 pages, 6139 KiB  
Article
Novel Pulsating-DC High-Voltage Linear Driving Scheme for GaN LED General Lighting
by Xiu Zhang, Baoxing Wang, Kai Fu, Rui Yue, Haojie Guo, Shuqi Li and Yong Cai
Electronics 2023, 12(3), 764; https://0-doi-org.brum.beds.ac.uk/10.3390/electronics12030764 - 02 Feb 2023
Viewed by 1290
Abstract
This work investigates a novel pulsating DC high-voltage linear driving scheme for GaN-based Light-emitting diode (GaN LED) general lighting to save costs and alleviate flicker. The superiority and practicality of this scheme in three-phase AC power grids were demonstrated for the first time. [...] Read more.
This work investigates a novel pulsating DC high-voltage linear driving scheme for GaN-based Light-emitting diode (GaN LED) general lighting to save costs and alleviate flicker. The superiority and practicality of this scheme in three-phase AC power grids were demonstrated for the first time. Compared to applications for single-phase AC grids, linear driving of GaN LEDs for three-phase AC grids can provide superior performance for general lighting. The DC component of the three-phase AC rectified voltage reaches 90.7%, which effectively alleviates the flicker problem. In this paper, we balanced GaN LED power and driving efficiency by optimizing the GaN LED distribution of the linear multi-string GaN LED driving scheme while taking the effects of grid voltage fluctuations into account. In addition, we constructed a double-string GaN LED lighting system as a modular prototype with scalability. The experimental results exhibit high driving efficiency (~94% @380 V line voltage), high power factor (~0.952), flicker-free, and high reliability at a very low cost (~$0.005/W). Full article
(This article belongs to the Special Issue Recent Advances in Wide Bandgap Semiconductors)
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