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Application and Advance of Photodetector and Image Sensors
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Application and Advance of Photodetector and Image Sensors

A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Physical Sensors".

Deadline for manuscript submissions: closed (10 March 2022) | Viewed by 6342

Special Issue Editor

Dr. Olivier Marcelot

E-Mail Website
Guest Editor
ISAE-SUPAERO, Université de Toulouse, 10 Avenue Edouard Belin, 31055 Toulouse, France
Interests: CMOS; pixel; PPD; photodiode; simulation; EBIC; CCD; semiconductor; test structure; TCAD; image sensor

Special Issue Information

Dear Colleagues,

CMOS Image Sensors are widely used in scientific and in consumer applications. Due to their intensive use and the continued increase in performance demand, innovations in CIS are especially important. Their potential fields of application are many and varied, such as medicine, biology, particle detection, electron microscopy, space observation, etc.

The scope of this Special Issue is to gather as much information and progress and as many methods as possible in the fields of image sensors, particle detectors, and also in modeling and in TCAD simulations related to these devices. In particular, the focus may be centered on process improvements, on new detector architectures (for instance, Quanta Image Sensors), on developments in measurement methodologies, and also in predictive simulations.

Dr. Olivier Marcelot
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Sensors is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • image sensor
  • TCAD
  • modeling
  • CIS
  • particle
  • single-photon avalanche diode (SPAD)
  • Quanta Image Sensor (QIS)

Published Papers (2 papers)

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Research

18 pages, 4969 KiB  
Article
Radiation Hardness Study of Single-Photon Avalanche Diode for Space and High Energy Physics Applications
by Ming-Lo Wu, Emanuele Ripiccini, Ekin Kizilkan, Francesco Gramuglia, Pouyan Keshavarzian, Carlo Alberto Fenoglio, Kazuhiro Morimoto and Edoardo Charbon
Sensors 2022, 22(8), 2919; https://0-doi-org.brum.beds.ac.uk/10.3390/s22082919 - 11 Apr 2022
Cited by 5 | Viewed by 2337
Abstract
The radiation hardness of 180 nm complementary metal–oxide–semiconductor (CMOS) and 55 nm bipolar–CMOS–double-diffused MOS single-photon avalanche diodes (SPADs) is studied using 10 MeV and 100 MeV protons up to a displacement damage dose of 1 PeV/g. It is found that the dark count [...] Read more.
The radiation hardness of 180 nm complementary metal–oxide–semiconductor (CMOS) and 55 nm bipolar–CMOS–double-diffused MOS single-photon avalanche diodes (SPADs) is studied using 10 MeV and 100 MeV protons up to a displacement damage dose of 1 PeV/g. It is found that the dark count rate (DCR) levels are dependent on the number and the type of defects created. A new stepwise increase in the DCR is presented. Afterpulsing was found to be a significant contributor to the observed DCR increase. A new model for DCR increase prediction is proposed considering afterpulsing. Most of the samples under test retain reasonable DCR levels after irradiation, showing high tolerance to ionizing and displacement damage caused by protons. Following irradiation, self-healing was observed at room temperature. Furthermore, high-temperature annealing shows potential for accelerating recovery. Overall, the results show the suitability of SPADs as optical detectors for long-term space missions or as detectors for high-energy particles. Full article
(This article belongs to the Special Issue Application and Advance of Photodetector and Image Sensors)
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17 pages, 871 KiB  
Article
Modeling, Simulation Methods and Characterization of Photon Detection Probability in CMOS-SPAD
by Aymeric Panglosse, Philippe Martin-Gonthier, Olivier Marcelot, Cédric Virmontois, Olivier Saint-Pé and Pierre Magnan
Sensors 2021, 21(17), 5860; https://0-doi-org.brum.beds.ac.uk/10.3390/s21175860 - 31 Aug 2021
Cited by 10 | Viewed by 3297
Abstract
Single-Photon Avalanche Diodes (SPAD) in Complementary Metal-Oxide Semiconductor (CMOS) technology are potential candidates for future “Light Detection and Ranging” (Lidar) space systems. Among the SPAD performance parameters, the Photon Detection Probability (PDP) is one of the principal parameters. Indeed, this parameter is used [...] Read more.
Single-Photon Avalanche Diodes (SPAD) in Complementary Metal-Oxide Semiconductor (CMOS) technology are potential candidates for future “Light Detection and Ranging” (Lidar) space systems. Among the SPAD performance parameters, the Photon Detection Probability (PDP) is one of the principal parameters. Indeed, this parameter is used to evaluate the SPAD sensitivity, which directly affects the laser power or the telescope diameter of space-borne Lidars. In this work, we developed a model and a simulation method to predict accurately the PDP of CMOS SPAD, based on a combination of measurements to acquire the CMOS process doping profile, Technology Computer-Aided Design (TCAD) simulations, and a Matlab routine. We compare our simulation results with a SPAD designed and processed in CMOS 180 nm technology. Our results show good agreement between PDP predictions and measurements, with a mean error around 18.5%, for wavelength between 450 and 950 nm and for a typical range of excess voltages between 15 and 30% of the breakdown voltage. Due to our SPAD architecture, the high field region is not entirely insulated from the substrate, a comparison between simulations performed with and without the substrate contribution indicates that PDP can be simulated without this latter with a moderate loss of precision, around 4.5 percentage points. Full article
(This article belongs to the Special Issue Application and Advance of Photodetector and Image Sensors)
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